An overview of the reliability prediction related aspects of high power IGBTs in wind power applications

Christian Busca, Remus Teodorescu, Frede Blaabjerg, Stig Munk-Nielsen, Lars Helle, T. Abeyasekerab, Pedro Rodriguez

Research output: Contribution to journalJournal articleResearchpeer-review

204 Citations (Scopus)
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Abstract

Reliability is becoming more and more important as the size and number of installed Wind Turbines (WTs) increases. Very high reliability is especially important for offshore WTs because the maintenance and repair of such WTs in case of failures can be very expensive. WT manufacturers need to consider the reliability aspect when they design new power converters. By designing the power converter considering the reliability aspect the manufacturer can guarantee that the end product will ensure high availability. This paper represents an overview of the various aspects of reliability prediction of high power Insulated Gate Bipolar Transistors (IGBTs) in the context of wind power applications. At first the latest developments and future predictions about wind energy are briefly discussed. Next the dominant failure mechanisms of high power IGBTs are described and the most commonly used lifetime prediction models are reviewed. Also the concept of Accelerated Life Testing (ALT) is briefly reviewed.
Original languageEnglish
JournalMicroelectronics Reliability
Volume51
Issue number9-11
Pages (from-to)1903-1907
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - 2011
Event22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2011 - Talence, France
Duration: 3 Oct 20117 Oct 2011

Conference

Conference22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2011
Country/TerritoryFrance
CityTalence
Period03/10/201107/10/2011

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