TY - JOUR
T1 - Analysis of Class-DE PA Using MOSFET Devices With Non-Equally Grading Coefficient
AU - Lotfi, A.
AU - Katsuki, A.
AU - Kurokawa, F.
AU - Sekiya, H.
AU - Kazimierczuk, M. K.
AU - Blaabjerg, Frede
PY - 2019/7
Y1 - 2019/7
N2 - The design and analysis of a new operation-mode of the class-DE power amplifier (PA) using two MOSFETs with the non-equal grading coefficient is introduced. The PA uses the optimum shunt capacitance for each MOSFET to achieve zero voltage switching (ZVS) condition and wide range for the load-resistance point of view. As compared with the conventional class-DE PA, this configuration has low value of the series inductance that is reduced the power dissipation. A design procedure with intuitive curves is obtained that are implemented using a different grading coefficient for two MOSFETs. These criteria prepared an effective approach regardless of the fixed shunt capacitance for achieving ZVS condition. The desired operation of the class-DE PA is guaranteed by converging of design parameters and required output power. Moreover, non-similar switches provide reduced switch power dissipations and the number of the driving circuit PA. The simulation and experiment results are approved by implementing the outlined theoretical relationships for a fabricated class-DE PA at 4-MHz switching frequency and obtained 12.1-W output power.
AB - The design and analysis of a new operation-mode of the class-DE power amplifier (PA) using two MOSFETs with the non-equal grading coefficient is introduced. The PA uses the optimum shunt capacitance for each MOSFET to achieve zero voltage switching (ZVS) condition and wide range for the load-resistance point of view. As compared with the conventional class-DE PA, this configuration has low value of the series inductance that is reduced the power dissipation. A design procedure with intuitive curves is obtained that are implemented using a different grading coefficient for two MOSFETs. These criteria prepared an effective approach regardless of the fixed shunt capacitance for achieving ZVS condition. The desired operation of the class-DE PA is guaranteed by converging of design parameters and required output power. Moreover, non-similar switches provide reduced switch power dissipations and the number of the driving circuit PA. The simulation and experiment results are approved by implementing the outlined theoretical relationships for a fabricated class-DE PA at 4-MHz switching frequency and obtained 12.1-W output power.
KW - MOSFET
KW - power amplifiers
KW - switching convertors
KW - zero voltage switching
KW - grading coefficient
KW - ZVS condition
KW - conventional class-DE PA
KW - fabricated class-DE PA
KW - driving circuit PA
KW - switch power dissipations
KW - nonsimilar switches
KW - required output power
KW - fixed shunt capacitance
KW - design procedure
KW - power dissipation
KW - optimum shunt capacitance
KW - nonequal grading coefficient
KW - class-DE power amplifier
KW - MOSFET devices
KW - Switches
KW - Zero voltage switching
KW - Power dissipation
KW - Junctions
KW - Parasitic capacitance
KW - Class-DE power amplifier
KW - switch stress
KW - zero voltage switching (ZVS)
KW - zero-derivative switching (ZDS)
KW - loaded-quality factor
KW - high efficiency
KW - load-resistance
KW - Class-DE power amplifier
KW - high efficiency
KW - load-resistance
KW - loaded-quality factor
KW - switch stress
KW - zero voltage switching (ZVS)
KW - zero-derivative switching (ZDS)
UR - http://www.scopus.com/inward/record.url?scp=85067925252&partnerID=8YFLogxK
U2 - 10.1109/TCSI.2019.2896542
DO - 10.1109/TCSI.2019.2896542
M3 - Journal article
SN - 1549-8328
VL - 66
SP - 2794
EP - 2802
JO - I E E E Transactions on Circuits and Systems Part 1: Regular Papers
JF - I E E E Transactions on Circuits and Systems Part 1: Regular Papers
IS - 7
M1 - 8661763
ER -