Analysis of Class-DE PA Using MOSFET Devices With Non-Equally Grading Coefficient

A. Lotfi, A. Katsuki, F. Kurokawa, H. Sekiya, M. K. Kazimierczuk, Frede Blaabjerg

Research output: Contribution to journalJournal articleResearchpeer-review

3 Citations (Scopus)
205 Downloads (Pure)

Abstract

The design and analysis of a new operation-mode of the class-DE power amplifier (PA) using two MOSFETs with the non-equal grading coefficient is introduced. The PA uses the optimum shunt capacitance for each MOSFET to achieve zero voltage switching (ZVS) condition and wide range for the load-resistance point of view. As compared with the conventional class-DE PA, this configuration has low value of the series inductance that is reduced the power dissipation. A design procedure with intuitive curves is obtained that are implemented using a different grading coefficient for two MOSFETs. These criteria prepared an effective approach regardless of the fixed shunt capacitance for achieving ZVS condition. The desired operation of the class-DE PA is guaranteed by converging of design parameters and required output power. Moreover, non-similar switches provide reduced switch power dissipations and the number of the driving circuit PA. The simulation and experiment results are approved by implementing the outlined theoretical relationships for a fabricated class-DE PA at 4-MHz switching frequency and obtained 12.1-W output power.

Original languageEnglish
Article number8661763
JournalI E E E Transactions on Circuits and Systems Part 1: Regular Papers
Volume66
Issue number7
Pages (from-to)2794-2802
Number of pages9
ISSN1549-8328
DOIs
Publication statusPublished - Jul 2019

Keywords

  • Class-DE power amplifier
  • high efficiency
  • load-resistance
  • loaded-quality factor
  • switch stress
  • zero voltage switching (ZVS)
  • zero-derivative switching (ZDS)

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