Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes

Carmine Abbate; Giovanni Busatto; Paolo Cova; Nicola Delmonte; Francesco Giuliani; Francesco Iannuzzo; Annunziata Sanseverino; Francesco Velardi.

doi:10.1109/TNS.2014.2387014

Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes

Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi.

Research output: Contribution to journal › Journal article › Research › peer-review

46 Citations (Scopus)

Abstract

A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.

Original language	English
Journal	IEEE Transactions on Nuclear Science
Volume	62
Issue number	1
Pages (from-to)	202-209
Number of pages	8
ISSN	0018-9499
DOIs	https://doi.org/10.1109/TNS.2014.2387014
Publication status	Published - Feb 2015
Externally published	Yes

Keywords

Radiation effects
Schottky diodes
Silicon carbide

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title = "Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes",

abstract = "A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.",

keywords = "Radiation effects, Schottky diodes, Silicon carbide",

author = "Carmine Abbate and Giovanni Busatto and Paolo Cova and Nicola Delmonte and Francesco Giuliani and Francesco Iannuzzo and Annunziata Sanseverino and Francesco Velardi.",

year = "2015",

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doi = "10.1109/TNS.2014.2387014",

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journal = "IEEE Transactions on Nuclear Science",

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T1 - Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes

AU - Abbate, Carmine

AU - Busatto, Giovanni

AU - Cova, Paolo

AU - Delmonte, Nicola

AU - Giuliani, Francesco

AU - Iannuzzo, Francesco

AU - Sanseverino, Annunziata

AU - Velardi., Francesco

PY - 2015/2

Y1 - 2015/2

N2 - A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.

AB - A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.

KW - Radiation effects

KW - Schottky diodes

KW - Silicon carbide

U2 - 10.1109/TNS.2014.2387014

DO - 10.1109/TNS.2014.2387014

M3 - Journal article

AN - SCOPUS:84923282198

SN - 0018-9499

VL - 62

SP - 202

EP - 209

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 1

ER -

Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes

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