Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

3 Citations (Scopus)
280 Downloads (Pure)

Abstract

Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.
Original languageEnglish
Title of host publication2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Number of pages8
PublisherIEEE (Institute of Electrical and Electronics Engineers)
Publication date4 Sept 2023
Article number10264475
ISBN (Print)979-8-3503-1678-0
ISBN (Electronic)978-9-0758-1541-2
DOIs
Publication statusPublished - 4 Sept 2023
Event2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark
Duration: 4 Sept 20238 Sept 2023

Conference

Conference2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Country/TerritoryDenmark
CityAalborg
Period04/09/202308/09/2023

Keywords

  • Capacitive coupling
  • Double pulse test
  • Medium voltage
  • Packaging
  • Parasitic inductance
  • SiC oscillation

Fingerprint

Dive into the research topics of 'Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET'. Together they form a unique fingerprint.

Cite this