Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event

Man Zhang; Helong Li; Zhiqing Yang; Shuang Zhao; Xiongfei Wang; Lijian Ding

doi:10.1109/ECCE53617.2023.10362468

Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event

Man Zhang^*, Helong Li, Zhiqing Yang, Shuang Zhao, Xiongfei Wang, Lijian Ding

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

1 Citation (Scopus)

Abstract

This paper investigates the short-circuit behavior of SiC MOSFETs in half bridge configuration during shoot-through event. The short-circuit peak current (I_SCP) as well as the distribution of drain to source voltage (V_DS) of half bridge configuration are analyzed under various mismatch operating condition. Further, the determinants on total amount and distribution of short-circuit energy (SC energy) are obtained. It is revealed that the device with the lowest short-circuit current carrying capacity determines the I_SCP and the total SC energy of half bridge leg. Besides, the decrease of active switch common source inductance can mitigate the V_DS and SC energy imbalance caused by load current. The conclusions are validated by experimental results.

Original language	English
Title of host publication	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Number of pages	9
Publisher	IEEE (Institute of Electrical and Electronics Engineers)
Publication date	2023
Pages	5350-5358
ISBN (Electronic)	9798350316445
DOIs	https://doi.org/10.1109/ECCE53617.2023.10362468
Publication status	Published - 2023
Externally published	Yes
Event	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 - Nashville, United States Duration: 29 Oct 2023 → 2 Nov 2023

Conference

Conference	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Country/Territory	United States
City	Nashville
Period	29/10/2023 → 02/11/2023
Sponsor	COMSOL, DELTA, et al., Hitachi, John Deere, Oak Ridge National Laboratory

Series	2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

Common source inductances
Short circuit
SiC MOSFET
Voltage distribution

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10.1109/ECCE53617.2023.10362468

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Cite this

@inproceedings{f76690d5eeed4a4aad6df25f6988ecad,

title = "Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event",

abstract = "This paper investigates the short-circuit behavior of SiC MOSFETs in half bridge configuration during shoot-through event. The short-circuit peak current (ISCP) as well as the distribution of drain to source voltage (VDS) of half bridge configuration are analyzed under various mismatch operating condition. Further, the determinants on total amount and distribution of short-circuit energy (SC energy) are obtained. It is revealed that the device with the lowest short-circuit current carrying capacity determines the ISCP and the total SC energy of half bridge leg. Besides, the decrease of active switch common source inductance can mitigate the VDS and SC energy imbalance caused by load current. The conclusions are validated by experimental results.",

keywords = "Common source inductances, Short circuit, SiC MOSFET, Voltage distribution",

author = "Man Zhang and Helong Li and Zhiqing Yang and Shuang Zhao and Xiongfei Wang and Lijian Ding",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 ; Conference date: 29-10-2023 Through 02-11-2023",

year = "2023",

doi = "10.1109/ECCE53617.2023.10362468",

language = "English",

series = "2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023",

pages = "5350--5358",

booktitle = "2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023",

publisher = "IEEE (Institute of Electrical and Electronics Engineers)",

address = "United States",

}

Zhang, M, Li, H, Yang, Z, Zhao, S, Wang, X & Ding, L 2023, Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event. in 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023. IEEE (Institute of Electrical and Electronics Engineers), 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023, pp. 5350-5358, 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023, Nashville, United States, 29/10/2023. https://doi.org/10.1109/ECCE53617.2023.10362468

Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event. / Zhang, Man; Li, Helong; Yang, Zhiqing et al.
2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023. IEEE (Institute of Electrical and Electronics Engineers), 2023. p. 5350-5358 (2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event

AU - Zhang, Man

AU - Li, Helong

AU - Yang, Zhiqing

AU - Zhao, Shuang

AU - Wang, Xiongfei

AU - Ding, Lijian

PY - 2023

Y1 - 2023

N2 - This paper investigates the short-circuit behavior of SiC MOSFETs in half bridge configuration during shoot-through event. The short-circuit peak current (ISCP) as well as the distribution of drain to source voltage (VDS) of half bridge configuration are analyzed under various mismatch operating condition. Further, the determinants on total amount and distribution of short-circuit energy (SC energy) are obtained. It is revealed that the device with the lowest short-circuit current carrying capacity determines the ISCP and the total SC energy of half bridge leg. Besides, the decrease of active switch common source inductance can mitigate the VDS and SC energy imbalance caused by load current. The conclusions are validated by experimental results.

AB - This paper investigates the short-circuit behavior of SiC MOSFETs in half bridge configuration during shoot-through event. The short-circuit peak current (ISCP) as well as the distribution of drain to source voltage (VDS) of half bridge configuration are analyzed under various mismatch operating condition. Further, the determinants on total amount and distribution of short-circuit energy (SC energy) are obtained. It is revealed that the device with the lowest short-circuit current carrying capacity determines the ISCP and the total SC energy of half bridge leg. Besides, the decrease of active switch common source inductance can mitigate the VDS and SC energy imbalance caused by load current. The conclusions are validated by experimental results.

KW - Common source inductances

KW - Short circuit

KW - SiC MOSFET

KW - Voltage distribution

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U2 - 10.1109/ECCE53617.2023.10362468

DO - 10.1109/ECCE53617.2023.10362468

M3 - Article in proceeding

AN - SCOPUS:85182936927

T3 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

SP - 5350

EP - 5358

BT - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

PB - IEEE (Institute of Electrical and Electronics Engineers)

T2 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

Y2 - 29 October 2023 through 2 November 2023

ER -

Zhang M, Li H, Yang Z, Zhao S, Wang X, Ding L. Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event. In 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023. IEEE (Institute of Electrical and Electronics Engineers). 2023. p. 5350-5358. (2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023). doi: 10.1109/ECCE53617.2023.10362468

Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event

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Keywords

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