Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter with Maximum dI_C/dt during Turn-off for High Power Trench Gate/Field-Stop IGBT Modules

In this paper, a dynamic thermo-sensitive electrical parameter (DTSEP) for extracting the junction temperature of the trench gate/field-stop insulated gate bipolar transistor (IGBT) modules by using the maximum collector current falling rate is proposed. First, a theoretical model of the transient collector current during turn-off process is developed in terms of the behavior characteristics of the inside storage carriers. Then, the inherent linear relationship between the maximum collector current falling rate dI{C}/dt and junction temperature T {j} is demonstrated and investigated. Fortunately, benefitting from the presence of the intrinsic parasitic inductance L{rm eE} between the Kelvin and power emitters of IGBT modules, the maximum dI{C}/dt can be easily measured to validate the theoretical analysis. Consequently, the maximum dI{C}/dt during turn-off process is a promising DTSEP for IGBT module junction temperature estimation. Moreover, the physical device parameters that affect the temperature sensitivity of the maximum dI{C}/dt are also discussed with the derived transient collector current falling model.