Annealing behavior of boron atoms implanted into polyethyleneterephtalate

J. Vacik, Vladimir Hnatowicz, J. Cervena, V. Perina, Vladimir Popok, Vladimir Odzhaev, V. Svorcik, V. Rybka, E. Arenholz, D. Fink

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4 Citations (Scopus)


Hundred keV B+ ions were implanted at high fluences into polyethyleneterephtalate (PET, Mylar) and the boron depth distributions were measured by the neutron depth profiling technique (NDP). Subsequently the implanted samples were annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inward and outward profile tails point at increased mobility and redistribution of boron atoms during the implantation. Thermal annealing to the temperatures below 100°C does not change the total boron content in the 1 μm thick surface layer and the boron depth profiles as well. For higher annealing temperatures a significant redistribution of boron atoms is observed.
Original languageEnglish
JournalNuclear Instruments and Methods in Physics Reseach B
Pages (from-to)637-640
Number of pages4
Publication statusPublished - May 2000
Externally publishedYes


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