Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure

G. Busatto, V. De Luca, Francesco Iannuzzo, A. Sanseverino, F. Velardi*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

2 Citations (Scopus)

Abstract

The behavior of medium voltage commercial power MOSFETs, first degraded with increasing γ-rays doses and subsequently irradiated with heavy ions, is presented. It is shown that the degradation of the gate oxide caused by the γ irradiation severely corrupt the SEE robustness and drastically modify the physical behavior of the device under test after the impact of a heavy ion. A decrease of the critical voltages at which destructive burnouts and gate ruptures appear has been detected in all devices previously irradiated with γ-rays, the amount of the critical voltage reduction is strictly related to the amount of the absorbed γ-rays dose. Furthermore, at the failure voltage, the behavior of the device is affected by the conduction of a current through the gate oxide. Moreover the SEGR of the device appears at lower voltages due to the reduction of the Fowler-Nordheim limit in the γ-irradiated devices.
Original languageEnglish
JournalMicroelectronics Reliability
Volume52
Issue number9-10
Pages (from-to)2363-2367
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - 1 Sept 2012
Externally publishedYes

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