Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

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Abstract

This paper analyzes the phenomenon of ground current in the filter inductors (with a grounded core/frame) of medium-voltage (MV) SiC-MOSFET-based. The inductor ground current is generated during the switching transients, due to the capacitive coupling between the winding and the core/frame. A general three-terminal equivalent circuit is proposed for representing the capacitive couplings of the filter inductors, which allows the extraction of equivalent admittances between the terminals by using the system identification tool, and thus the ground current can be accurately simulated in the frequency range of concern (up to 100 MHz in this paper). The simulated ground current based on the behavioral model match closely with the experimental results measured in a medium voltage SiC MOSFET based double-pulse test.
Original languageEnglish
Title of host publicationProceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages7
PublisherIEEE Press
Publication dateJun 2020
Pages1972-1978
Article number9124147
ISBN (Electronic)9781728148298
DOIs
Publication statusPublished - Jun 2020
Event2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, United States
Duration: 15 Mar 202019 Mar 2020

Conference

Conference2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Country/TerritoryUnited States
CityNew Orleans, LA
Period15/03/202019/03/2020
SeriesIEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN1048-2334

Keywords

  • Ground current
  • filter inductors
  • general three-terminal equivalent circuit
  • behavioral modeling
  • Double-pulse test

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