Capacitive effects in IGBTs limiting their reliability under short circuit

Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Frede Blaabjerg

Research output: Contribution to journalConference article in JournalResearchpeer-review

5 Citations (Scopus)
150 Downloads (Pure)

Abstract

The short-circuit oscillation mechanism in IGBTs is investigated in this paper by the aid of semiconductor device simulation tools. A 3.3-kV IGBT cell has been used for the simulations demonstrating that a single IGBT cell is able to oscillate together with the external circuit parasitic elements. The work presented here through both circuit and device analysis, confirms that the oscillations can be understood with focus on the device capacitive effects coming from the interaction between carrier concentration and the electric field. The paper also shows the 2-D effects during one oscillation cycle, revealing that the gate capacitance changes according with the shape of the electric field due to the charge distribution in the n-base. It has been identified that the time-varying capacitance leads to parametric oscillations together with the stray gate inductance, which limit the reliability of the IGBT.
Original languageEnglish
JournalMicroelectronics Reliability
Volume76-77
Pages (from-to)485-489
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - 2017
Event28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, France
Duration: 25 Sep 201728 Sep 2017

Conference

Conference28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
CountryFrance
CityBordeaux
Period25/09/201728/09/2017

Keywords

  • IGBT
  • Short circuit
  • Oscillations
  • Parametric oscillations
  • Reliability
  • TCAD

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