Catastrophic Failure and Fault-Tolerant Design of IGBT Power Electronic Converters - An Overview

Rui Wu, Frede Blaabjerg, Huai Wang, Marco Liserre, Francesco Iannuzzo

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

195 Citations (Scopus)
8418 Downloads (Pure)

Abstract

Reliability is one of the key issues for the application of Insulated Gate Bipolar Transistors (IGBTs) in power electronic converters. Many efforts have been devoted to the reduction of IGBT wear out failure induced by accumulated degradation and catastrophic failure triggered by single-event overstress. The wear out failure under field operation could be mitigated by scheduled maintenances based on lifetime prediction and condition monitoring. However, the catastrophic failure is difficult to be predicted and thus may lead to serious consequence of power electronic converters. To obtain a better understanding of catastrophic failure of IGBTs, the state-of-the-art research on their failure behaviors and failure mechanisms is presented in this paper. Moreover, various fault-tolerant design methods, to prevent converter level malfunctions in the event of IGBT failure, are also reviewed.
Original languageEnglish
Title of host publicationProceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013
Number of pages7
PublisherIEEE Press
Publication dateNov 2013
Pages507-513
ISBN (Print)978-1-4799-0223-1
ISBN (Electronic)978-1-4799-0224-8
DOIs
Publication statusPublished - Nov 2013
Event39th Annual Conference of the IEEE Industrial Electronics Society - Wien, Austria
Duration: 10 Nov 201313 Nov 2013

Conference

Conference39th Annual Conference of the IEEE Industrial Electronics Society
Country/TerritoryAustria
CityWien
Period10/11/201313/11/2013

Keywords

  • Insulated Gate Bipolar Transistor
  • Power electronics
  • Catastrophic failure
  • Fault torlerant circuit

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