Challenges in Switching SiC MOSFET without Ringing

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

17 Citations (Scopus)

Abstract

Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design.
Original languageEnglish
Title of host publicationProceedings of PCIM Europe 2014
Number of pages6
PublisherVDE Verlag GMBH
Publication dateMay 2014
Pages989-994
ISBN (Electronic)978-3-8007-3603-4
Publication statusPublished - May 2014
EventPCIM Europe 2014 - Nürnberg, Germany
Duration: 20 May 201422 May 2014

Conference

ConferencePCIM Europe 2014
Country/TerritoryGermany
CityNürnberg
Period20/05/201422/05/2014

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