Abstract
Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design.
Original language | English |
---|---|
Title of host publication | Proceedings of PCIM Europe 2014 |
Number of pages | 6 |
Publisher | VDE Verlag GMBH |
Publication date | May 2014 |
Pages | 989-994 |
ISBN (Electronic) | 978-3-8007-3603-4 |
Publication status | Published - May 2014 |
Event | PCIM Europe 2014 - Nürnberg, Germany Duration: 20 May 2014 → 22 May 2014 |
Conference
Conference | PCIM Europe 2014 |
---|---|
Country/Territory | Germany |
City | Nürnberg |
Period | 20/05/2014 → 22/05/2014 |