Characterisation of 10 kV 10 A SiC MOSFET

Emanuel-Petre Eni, Bogdan Ioan Incau, Stig Munk-Nielsen, Tamas Kerekes, Remus Teodorescu

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

5 Citations (Scopus)

Abstract

The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.
Original languageEnglish
Title of host publicationProceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION)
PublisherIEEE
Publication date2015
Pages675-680
ISBN (Print)978-1-4673-7239-8
DOIs
Publication statusPublished - 2015
Event2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference - Side, Side, Turkey
Duration: 2 Sep 20154 Sep 2015
Conference number: 1
http://www.acemp-metu.com/Pages/Home

Conference

Conference2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference
Number1
LocationSide
Country/TerritoryTurkey
CitySide
Period02/09/201504/09/2015
Internet address

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