Characterisation of 10 kV 10 A SiC MOSFET

Emanuel-Petre Eni; Bogdan Ioan Incau; Stig Munk-Nielsen; Tamas Kerekes; Remus Teodorescu

doi:10.1109/OPTIM.2015.7427016

Characterisation of 10 kV 10 A SiC MOSFET

Emanuel-Petre Eni, Bogdan Ioan Incau, Stig Munk-Nielsen, Tamas Kerekes, Remus Teodorescu

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

5 Citations (Scopus)

Abstract

The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.

Original language	English
Title of host publication	Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION)
Publisher	IEEE
Publication date	2015
Pages	675-680
ISBN (Print)	978-1-4673-7239-8
DOIs	https://doi.org/10.1109/OPTIM.2015.7427016
Publication status	Published - 2015
Event	2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference - Side, Side, Turkey Duration: 2 Sep 2015 → 4 Sep 2015 Conference number: 1 http://www.acemp-metu.com/Pages/Home

Conference

Conference	2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference
Number	1
Location	Side
Country/Territory	Turkey
City	Side
Period	02/09/2015 → 04/09/2015
Internet address	http://www.acemp-metu.com/Pages/Home

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10.1109/OPTIM.2015.7427016

Cite this

Eni, E-P., Incau, B. I., Munk-Nielsen, S., Kerekes, T., & Teodorescu, R. (2015). Characterisation of 10 kV 10 A SiC MOSFET. In Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION) (pp. 675-680). IEEE. https://doi.org/10.1109/OPTIM.2015.7427016

Eni, Emanuel-Petre ; Incau, Bogdan Ioan ; Munk-Nielsen, Stig ; Kerekes, Tamas ; Teodorescu, Remus. / Characterisation of 10 kV 10 A SiC MOSFET. Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION). IEEE, 2015. pp. 675-680

@inproceedings{bfe346fc5308495d81ce181dbb5a4ed8,

title = "Characterisation of 10 kV 10 A SiC MOSFET",

abstract = "The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.",

author = "Emanuel-Petre Eni and Incau, {Bogdan Ioan} and Stig Munk-Nielsen and Tamas Kerekes and Remus Teodorescu",

year = "2015",

doi = "10.1109/OPTIM.2015.7427016",

language = "English",

isbn = "978-1-4673-7239-8",

pages = "675--680",

booktitle = "Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION)",

publisher = "IEEE",

address = "United States",

note = "2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference, ACEMP-OPTIOM ; Conference date: 02-09-2015 Through 04-09-2015",

url = "http://www.acemp-metu.com/Pages/Home",

}

Eni, E-P, Incau, BI, Munk-Nielsen, S , Kerekes, T & Teodorescu, R 2015, Characterisation of 10 kV 10 A SiC MOSFET. in Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION). IEEE, pp. 675-680, 2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference, Side, Turkey, 02/09/2015. https://doi.org/10.1109/OPTIM.2015.7427016

Characterisation of 10 kV 10 A SiC MOSFET. / Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig ; Kerekes, Tamas ; Teodorescu, Remus.

Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION). IEEE, 2015. p. 675-680.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Characterisation of 10 kV 10 A SiC MOSFET

AU - Eni, Emanuel-Petre

AU - Incau, Bogdan Ioan

AU - Munk-Nielsen, Stig

AU - Kerekes, Tamas

AU - Teodorescu, Remus

N1 - Conference code: 1

PY - 2015

Y1 - 2015

N2 - The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.

AB - The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.

U2 - 10.1109/OPTIM.2015.7427016

DO - 10.1109/OPTIM.2015.7427016

M3 - Article in proceeding

SN - 978-1-4673-7239-8

SP - 675

EP - 680

BT - Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION)

PB - IEEE

T2 - 2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference

Y2 - 2 September 2015 through 4 September 2015

ER -

Eni E-P, Incau BI, Munk-Nielsen S , Kerekes T , Teodorescu R. Characterisation of 10 kV 10 A SiC MOSFET. In Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION). IEEE. 2015. p. 675-680 https://doi.org/10.1109/OPTIM.2015.7427016

Characterisation of 10 kV 10 A SiC MOSFET

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