The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.
|Title of host publication||Proceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION)|
|Publication status||Published - 2015|
|Event||2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference - Side, Side, Turkey|
Duration: 2 Sep 2015 → 4 Sep 2015
Conference number: 1
|Conference||2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference|
|Period||02/09/2015 → 04/09/2015|