Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs

Helong Li, Stig Munk-Nielsen, Cam Pham, Szymon Beczkowski

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

32 Citations (Scopus)

Abstract

This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies.
Original languageEnglish
Title of host publicationProceedings of the 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe)
Number of pages8
PublisherIEEE Press
Publication dateAug 2014
Pages1-8
DOIs
Publication statusPublished - Aug 2014
Event16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe - Lappeenranta, Finland
Duration: 26 Aug 201428 Aug 2014

Conference

Conference16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe
Country/TerritoryFinland
CityLappeenranta
Period26/08/201428/08/2014

Keywords

  • Wide bandgap devices
  • Silicon Carbide (SiC)
  • MOSFET
  • Parallel operation

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