Compact Sandwiched Press-Pack SiC Power Module with Low Stray Inductance and Balanced Thermal Stress

Y. Chang, H. Luo, F. Iannuzzo, A. S. Bahman, W. Li, X. He, F. Blaabjerg

Research output: Contribution to journalJournal articleResearchpeer-review

29 Citations (Scopus)
143 Downloads (Pure)

Abstract

In this letter, a compact silicon carbide (SiC) power module featuring low stray inductance and balanced thermal resistance is proposed. To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly packed as parts of the SiC power module. To balance the mechanical and thermal stress on the chips, a press-pack-like package technology is adopted. The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution.

Original languageEnglish
Article number8794576
JournalIEEE Transactions on Power Electronics
Volume35
Issue number3
Pages (from-to) 2237 - 2241
Number of pages5
ISSN1941-0107
DOIs
Publication statusPublished - Mar 2020

Keywords

  • Silicon carbide (SiC)
  • package
  • stray inductance
  • thermal press-pack
  • press-pack
  • thermal stress

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