Abstract
In this letter, a compact silicon carbide (SiC) power module featuring low stray inductance and balanced thermal resistance is proposed. To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly packed as parts of the SiC power module. To balance the mechanical and thermal stress on the chips, a press-pack-like package technology is adopted. The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution.
Original language | English |
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Article number | 8794576 |
Journal | IEEE Transactions on Power Electronics |
Volume | 35 |
Issue number | 3 |
Pages (from-to) | 2237 - 2241 |
Number of pages | 5 |
ISSN | 1941-0107 |
DOIs | |
Publication status | Published - Mar 2020 |
Keywords
- Silicon carbide (SiC)
- package
- stray inductance
- thermal press-pack
- press-pack
- thermal stress