Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

Ran Yao; Francesco Iannuzzo; Amir Sajjad Bahman; Hui Li

doi:10.23919/EPE20ECCEEurope43536.2020.9215875

Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

Ran Yao, Francesco Iannuzzo, Amir Sajjad Bahman, Hui Li

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

2 Citations (Scopus)

Abstract

This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

Original language	English
Title of host publication	2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Publisher	IEEE (Institute of Electrical and Electronics Engineers)
Publication date	Sept 2020
Article number	9215875
ISBN (Electronic)	9789075815368
DOIs	https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215875
Publication status	Published - Sept 2020
Event	22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe - Lyon, France Duration: 7 Sept 2020 → 11 Sept 2020

Conference

Conference	22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Country/Territory	France
City	Lyon
Period	07/09/2020 → 11/09/2020

Bibliographical note

Funding Information:
This work has been carried out under the APETT Project, funded by the Danish Innovation Foundation, 2017-2021, and under the National Key Research and Development Program of China under Grant 2018YFB0905704.

Publisher Copyright:
© 2020 EPE Association.

Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.

Keywords

finite element modeling
MOSFET
press pack
short circuit
silicon carbide

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10.23919/EPE20ECCEEurope43536.2020.9215875

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Cite this

Yao, R., Iannuzzo, F., Bahman, A. S., & Li, H. (2020). Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions. In 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe Article 9215875 IEEE (Institute of Electrical and Electronics Engineers). https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215875

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title = "Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions",

abstract = "This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.",

keywords = "finite element modeling, MOSFET, press pack, short circuit, silicon carbide",

author = "Ran Yao and Francesco Iannuzzo and Bahman, {Amir Sajjad} and Hui Li",

note = "Funding Information: This work has been carried out under the APETT Project, funded by the Danish Innovation Foundation, 2017-2021, and under the National Key Research and Development Program of China under Grant 2018YFB0905704. Publisher Copyright: {\textcopyright} 2020 EPE Association. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe ; Conference date: 07-09-2020 Through 11-09-2020",

year = "2020",

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doi = "10.23919/EPE20ECCEEurope43536.2020.9215875",

language = "English",

booktitle = "2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe",

publisher = "IEEE (Institute of Electrical and Electronics Engineers)",

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Yao, R, Iannuzzo, F , Bahman, AS & Li, H 2020, Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions. in 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe., 9215875, IEEE (Institute of Electrical and Electronics Engineers), 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, Lyon, France, 07/09/2020. https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215875

Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions. / Yao, Ran; Iannuzzo, Francesco ; Bahman, Amir Sajjad et al.
2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe. IEEE (Institute of Electrical and Electronics Engineers), 2020. 9215875.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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AU - Yao, Ran

AU - Iannuzzo, Francesco

AU - Bahman, Amir Sajjad

AU - Li, Hui

N1 - Funding Information: This work has been carried out under the APETT Project, funded by the Danish Innovation Foundation, 2017-2021, and under the National Key Research and Development Program of China under Grant 2018YFB0905704. Publisher Copyright: © 2020 EPE Association. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/9

Y1 - 2020/9

N2 - This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

AB - This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

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KW - silicon carbide

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M3 - Article in proceeding

AN - SCOPUS:85094887790

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Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

Abstract

Conference

Bibliographical note

Keywords

Access to Document

AUB Link

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Fingerprint

APETT: Advanced Power Electronic Technology and Tools

Cite this

Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

Abstract

Conference

Bibliographical note

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

APETT: Advanced Power Electronic Technology and Tools

Cite this