Comparison of Selective Deposition Techniques for Fabricating p+n Ultrashallow Silicon Diodes

Xingyu Liu, Shivakumar D. Thammaiah, Thomas L.M Scholtes, Lis K Nanver

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

Original language	English
Title of host publication	Proceedings of ICT.OPEN-2016, Semiconductor Advances for Future Electronics and Sensors (SAFE)
Publication date	21 Mar 2016
ISBN (Electronic)	978-90-73461-932
Publication status	Published - 21 Mar 2016
Event	ICT Open Event - , Netherlands Duration: 22 Mar 2016 → 23 Mar 2016

AUB Link

@inproceedings{a4d63739239e41da8905e5707ce4f0d6,

title = "Comparison of Selective Deposition Techniques for Fabricating p+n Ultrashallow Silicon Diodes",

author = "Xingyu Liu and Thammaiah, {Shivakumar D.} and Scholtes, {Thomas L.M} and Nanver, {Lis K}",

year = "2016",

month = mar,

day = "21",

language = "English",

booktitle = "Proceedings of ICT.OPEN-2016, Semiconductor Advances for Future Electronics and Sensors (SAFE)",

note = "ICT Open Event ; Conference date: 22-03-2016 Through 23-03-2016",

}

Comparison of Selective Deposition Techniques for Fabricating p+n Ultrashallow Silicon Diodes. / Liu, Xingyu; Thammaiah, Shivakumar D.; Scholtes, Thomas L.M et al.
Proceedings of ICT.OPEN-2016, Semiconductor Advances for Future Electronics and Sensors (SAFE). 2016.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Comparison of Selective Deposition Techniques for Fabricating p+n Ultrashallow Silicon Diodes

AU - Liu, Xingyu

AU - Thammaiah, Shivakumar D.

AU - Scholtes, Thomas L.M

AU - Nanver, Lis K

PY - 2016/3/21

Y1 - 2016/3/21

M3 - Article in proceeding

BT - Proceedings of ICT.OPEN-2016, Semiconductor Advances for Future Electronics and Sensors (SAFE)

T2 - ICT Open Event

Y2 - 22 March 2016 through 23 March 2016

ER -