Compensated Power Sensor for Semiconductor Switching Loss Measurement

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Abstract

Quantifying switching losses is crucial for designing high efficiency power converters. However, switching energy data is limited, partially due to limitations of a standard double-pulse
test (DPT). This paper presents a simple calorimetric fixture operating on the principle of heat flux balance, capable of separating turn-on and turn-off energies at various junction temperatures. It requires minimal calibration and is significantly faster than conventional calorimetric methods. Contrary to DPT-based data, a complete loss map of a transistor can be extracted, including hard- and soft-switching regimes. The method does not modify the commutation loop and can be operated in situ in the designed converter, measuring switching energies that include effects of actual circuit parasitics and component parameters.
Original languageEnglish
Title of host publication2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Number of pages5
PublisherIEEE (Institute of Electrical and Electronics Engineers)
Publication date17 May 2024
Pages378-382
ISBN (Print)979-8-3503-5134-7
ISBN (Electronic)979-8-3503-5133-0
DOIs
Publication statusPublished - 17 May 2024
Event 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) - Chengdu, China
Duration: 17 May 202420 May 2024
https://ieeexplore.ieee.org/xpl/conhome/10567049/proceeding

Conference

Conference 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Country/TerritoryChina
CityChengdu
Period17/05/202420/05/2024
Internet address
SeriesInternational Power Electronics and Motion Control Conference (PEMC)
ISSN2473-0165

Keywords

  • Loss measurement
  • power MOSFET
  • power sensor
  • switching losses
  • zero-voltage switching

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