Complex Crater Formation on Silicon by Low-Energy Ar Cluster Ion Implantation

Vladimir Popok, S. Prasalovich, Eleanor E.B. Campbell

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16 Citations (Scopus)


Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.
Original languageEnglish
JournalSurface Science
Issue numberPart 2
Pages (from-to)1179-1184
Number of pages6
Publication statusPublished - Sep 2004
Externally publishedYes


  • Cluster ion implantation
  • surface morphology
  • atomic force microscopy


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