Abstract
Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.
| Original language | English |
|---|---|
| Journal | Surface Science |
| Volume | 566-568 |
| Issue number | Part 2 |
| Pages (from-to) | 1179-1184 |
| Number of pages | 6 |
| ISSN | 0039-6028 |
| Publication status | Published - Sept 2004 |
| Externally published | Yes |
Keywords
- Cluster ion implantation
- surface morphology
- atomic force microscopy