Comprehensive physical analysis of bond wire interfaces in power modules

    Research output: Contribution to journalJournal articleResearchpeer-review

    6 Citations (Scopus)
    148 Downloads (Pure)

    Abstract

    Power modules based on insulated gate bipolar transistors have become very widely used units in energy technology. Handling large currents and high voltages at high switching frequencies leads to degradation of materials in the devices, especially at interfaces and interconnections, eventually causing failures. In this paper we present a review on the set of our experimental and theoretical studies allowing comprehensive physical analysis of changes in materials under active power cycling with focus on bond wire interfaces and thin metallisation layers. The developed electro-thermal and thermo-mechanical models that can be applied to mimic the device under particular operation conditions and to evaluate stress factors related to heat dissipation are briefly presented. The results of modelling, which predict materials degradation, are compared with a few exemplary cases obtained using the micro-sectioning combined with optical microscopy and scanning electron microscopy assisted by focused ion beam milling. These experimental results show very good agreement with wear out effects predicted by simulations. Additionally, measurements of resistance using four-point probe method are demonstrated to be a very powerful tool to map the degradation of individual components and interfaces.
    Original languageEnglish
    JournalMicroelectronics Reliability
    Volume58
    Pages (from-to)58-64
    Number of pages7
    ISSN0026-2714
    DOIs
    Publication statusPublished - 1 Apr 2016

    Fingerprint

    wire
    Wire
    degradation
    Degradation
    energy technology
    Focused ion beams
    Insulated gate bipolar transistors (IGBT)
    Switching frequency
    bipolar transistors
    Metallizing
    Heat losses
    Optical microscopy
    high voltages
    ion beams
    Wear of materials
    microscopy
    Scanning
    cooling
    Scanning electron microscopy
    cycles

    Keywords

    • IGBT power modules,
    • Electro-thermo-mechanical degradation,
    • Bond wire lift-off,
    • Metallisation reconstruction

    Cite this

    @article{e713e785035e490392f7aa52c1b0bcf7,
    title = "Comprehensive physical analysis of bond wire interfaces in power modules",
    abstract = "Power modules based on insulated gate bipolar transistors have become very widely used units in energy technology. Handling large currents and high voltages at high switching frequencies leads to degradation of materials in the devices, especially at interfaces and interconnections, eventually causing failures. In this paper we present a review on the set of our experimental and theoretical studies allowing comprehensive physical analysis of changes in materials under active power cycling with focus on bond wire interfaces and thin metallisation layers. The developed electro-thermal and thermo-mechanical models that can be applied to mimic the device under particular operation conditions and to evaluate stress factors related to heat dissipation are briefly presented. The results of modelling, which predict materials degradation, are compared with a few exemplary cases obtained using the micro-sectioning combined with optical microscopy and scanning electron microscopy assisted by focused ion beam milling. These experimental results show very good agreement with wear out effects predicted by simulations. Additionally, measurements of resistance using four-point probe method are demonstrated to be a very powerful tool to map the degradation of individual components and interfaces.",
    keywords = "IGBT power modules,, Electro-thermo-mechanical degradation,, Bond wire lift-off,, Metallisation reconstruction",
    author = "Vladimir Popok and Pedersen, {Kristian Bonderup} and Kristensen, {Peter Kj{\ae}r} and Kjeld Pedersen",
    year = "2016",
    month = "4",
    day = "1",
    doi = "10.1016/j.microrel.2015.11.025",
    language = "English",
    volume = "58",
    pages = "58--64",
    journal = "Microelectronics Reliability",
    issn = "0026-2714",
    publisher = "Pergamon Press",

    }

    Comprehensive physical analysis of bond wire interfaces in power modules. / Popok, Vladimir; Pedersen, Kristian Bonderup; Kristensen, Peter Kjær; Pedersen, Kjeld.

    In: Microelectronics Reliability, Vol. 58, 01.04.2016, p. 58-64.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Comprehensive physical analysis of bond wire interfaces in power modules

    AU - Popok, Vladimir

    AU - Pedersen, Kristian Bonderup

    AU - Kristensen, Peter Kjær

    AU - Pedersen, Kjeld

    PY - 2016/4/1

    Y1 - 2016/4/1

    N2 - Power modules based on insulated gate bipolar transistors have become very widely used units in energy technology. Handling large currents and high voltages at high switching frequencies leads to degradation of materials in the devices, especially at interfaces and interconnections, eventually causing failures. In this paper we present a review on the set of our experimental and theoretical studies allowing comprehensive physical analysis of changes in materials under active power cycling with focus on bond wire interfaces and thin metallisation layers. The developed electro-thermal and thermo-mechanical models that can be applied to mimic the device under particular operation conditions and to evaluate stress factors related to heat dissipation are briefly presented. The results of modelling, which predict materials degradation, are compared with a few exemplary cases obtained using the micro-sectioning combined with optical microscopy and scanning electron microscopy assisted by focused ion beam milling. These experimental results show very good agreement with wear out effects predicted by simulations. Additionally, measurements of resistance using four-point probe method are demonstrated to be a very powerful tool to map the degradation of individual components and interfaces.

    AB - Power modules based on insulated gate bipolar transistors have become very widely used units in energy technology. Handling large currents and high voltages at high switching frequencies leads to degradation of materials in the devices, especially at interfaces and interconnections, eventually causing failures. In this paper we present a review on the set of our experimental and theoretical studies allowing comprehensive physical analysis of changes in materials under active power cycling with focus on bond wire interfaces and thin metallisation layers. The developed electro-thermal and thermo-mechanical models that can be applied to mimic the device under particular operation conditions and to evaluate stress factors related to heat dissipation are briefly presented. The results of modelling, which predict materials degradation, are compared with a few exemplary cases obtained using the micro-sectioning combined with optical microscopy and scanning electron microscopy assisted by focused ion beam milling. These experimental results show very good agreement with wear out effects predicted by simulations. Additionally, measurements of resistance using four-point probe method are demonstrated to be a very powerful tool to map the degradation of individual components and interfaces.

    KW - IGBT power modules,

    KW - Electro-thermo-mechanical degradation,

    KW - Bond wire lift-off,

    KW - Metallisation reconstruction

    U2 - 10.1016/j.microrel.2015.11.025

    DO - 10.1016/j.microrel.2015.11.025

    M3 - Journal article

    VL - 58

    SP - 58

    EP - 64

    JO - Microelectronics Reliability

    JF - Microelectronics Reliability

    SN - 0026-2714

    ER -