Conductance and polarisability of C60 films

Vladimir Popok, Martin Jönsson, Eleanor E.B. Campbell

Research output: Contribution to journalJournal articleResearchpeer-review

6 Citations (Scopus)

Abstract

Thin films of C60 deposited in vacuum are studied using current-voltage (I-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 MOhm.cm for the as-deposited films at room temperature. The I-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remanent polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 eV. With further temperature increase the C60 films restructure leading to an increase in grain size and a change of the electrical properties with I-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C60 films under their exposure to an ambient atmosphere is considered and discussed.
Original languageEnglish
JournalJournal of Nanoscience and Nanotechnology
Volume7
Issue number4-5
Pages (from-to)1434-1438
Number of pages5
ISSN1533-4880
DOIs
Publication statusPublished - Apr 2007
Externally publishedYes

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Atomic force microscopy
atomic force microscopy
Remanence
Temperature
electrical measurement
Surface morphology
Hysteresis
Electric properties
Activation energy
grain size
hysteresis
electrical properties
Vacuum
Oxygen
activation energy
atmospheres
Thin films
vacuum
electrical resistivity
temperature

Cite this

Popok, Vladimir ; Jönsson, Martin ; Campbell, Eleanor E.B. / Conductance and polarisability of C60 films. In: Journal of Nanoscience and Nanotechnology. 2007 ; Vol. 7, No. 4-5. pp. 1434-1438.
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Conductance and polarisability of C60 films. / Popok, Vladimir; Jönsson, Martin; Campbell, Eleanor E.B.

In: Journal of Nanoscience and Nanotechnology, Vol. 7, No. 4-5, 04.2007, p. 1434-1438.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Conductance and polarisability of C60 films

AU - Popok, Vladimir

AU - Jönsson, Martin

AU - Campbell, Eleanor E.B.

PY - 2007/4

Y1 - 2007/4

N2 - Thin films of C60 deposited in vacuum are studied using current-voltage (I-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 MOhm.cm for the as-deposited films at room temperature. The I-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remanent polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 eV. With further temperature increase the C60 films restructure leading to an increase in grain size and a change of the electrical properties with I-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C60 films under their exposure to an ambient atmosphere is considered and discussed.

AB - Thin films of C60 deposited in vacuum are studied using current-voltage (I-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 MOhm.cm for the as-deposited films at room temperature. The I-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remanent polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 eV. With further temperature increase the C60 films restructure leading to an increase in grain size and a change of the electrical properties with I-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C60 films under their exposure to an ambient atmosphere is considered and discussed.

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