Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs

Morten Rahr Nielsen; Mathias Kirkeby; Hongbo Zhao; Jannick Kjær Jørgensen; Michael Møller Bech; Stig Munk-Nielsen

doi:10.23919/EPE23ECCEEurope58414.2023.10264515

Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs

Morten Rahr Nielsen, Mathias Kirkeby, Hongbo Zhao, Jannick Kjær Jørgensen, Michael Møller Bech, Stig Munk-Nielsen

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

2 Citations (Scopus)

26 Downloads (Pure)

Abstract

This paper highlights the increased importance of volt-second compensating converter non-linearities such as dead time for wide bandgap semi-conductor devices utilized in medium voltage converters. The increasing voltage level of medium voltage converters impose a penalty to the volt-second compensation required to compensate for the voltage error caused by dead time. A thorough analysis and experimental results of switching events are utilized to present the required volt-second compensation for a 10 kV silicon-carbide MOSFET power module.

Original language	English
Title of host publication	2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Publisher	IEEE (Institute of Electrical and Electronics Engineers)
Publication date	2 Oct 2023
Article number	10264515
ISBN (Electronic)	9789075815412
DOIs	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264515
Publication status	Published - 2 Oct 2023
Event	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023

Conference

Conference	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Country/Territory	Denmark
City	Aalborg
Period	04/09/2023 → 08/09/2023

Keywords

Compensation
Dead time
MOSFET
Medium voltage
Silicon Carbide (SiC)
Wide bandgap

Access to Document

10.23919/EPE23ECCEEurope58414.2023.10264515

Dead_Time_Volt_Second_Compensation_of_Converters_Enabled_by_10_kV_SiC_MOSFETsSubmitted manuscript, 3.15 MB

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Cite this

Nielsen, M. R., Kirkeby, M., Zhao, H., Jørgensen, J. K., Bech, M. M., & Munk-Nielsen, S. (2023). Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs. In 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe Article 10264515 IEEE (Institute of Electrical and Electronics Engineers). https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264515

@inproceedings{07c24247758645c08f3dcfb10ad1b920,

title = "Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs",

abstract = "This paper highlights the increased importance of volt-second compensating converter non-linearities such as dead time for wide bandgap semi-conductor devices utilized in medium voltage converters. The increasing voltage level of medium voltage converters impose a penalty to the volt-second compensation required to compensate for the voltage error caused by dead time. A thorough analysis and experimental results of switching events are utilized to present the required volt-second compensation for a 10 kV silicon-carbide MOSFET power module.",

keywords = "Compensation, Dead time, MOSFET, Medium voltage, Silicon Carbide (SiC), Wide bandgap",

author = "Nielsen, {Morten Rahr} and Mathias Kirkeby and Hongbo Zhao and J{\o}rgensen, {Jannick Kj{\ae}r} and Bech, {Michael M{\o}ller} and Stig Munk-Nielsen",

year = "2023",

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doi = "10.23919/EPE23ECCEEurope58414.2023.10264515",

language = "English",

booktitle = "2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe",

publisher = "IEEE (Institute of Electrical and Electronics Engineers)",

address = "United States",

note = "2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) ; Conference date: 04-09-2023 Through 08-09-2023",

}

Nielsen, MR, Kirkeby, M, Zhao, H , Jørgensen, JK , Bech, MM & Munk-Nielsen, S 2023, Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs. in 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe., 10264515, IEEE (Institute of Electrical and Electronics Engineers), 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark, 04/09/2023. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264515

Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs. / Nielsen, Morten Rahr; Kirkeby, Mathias; Zhao, Hongbo et al.
2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE (Institute of Electrical and Electronics Engineers), 2023. 10264515.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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T1 - Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs

AU - Nielsen, Morten Rahr

AU - Kirkeby, Mathias

AU - Zhao, Hongbo

AU - Jørgensen, Jannick Kjær

AU - Bech, Michael Møller

AU - Munk-Nielsen, Stig

PY - 2023/10/2

Y1 - 2023/10/2

N2 - This paper highlights the increased importance of volt-second compensating converter non-linearities such as dead time for wide bandgap semi-conductor devices utilized in medium voltage converters. The increasing voltage level of medium voltage converters impose a penalty to the volt-second compensation required to compensate for the voltage error caused by dead time. A thorough analysis and experimental results of switching events are utilized to present the required volt-second compensation for a 10 kV silicon-carbide MOSFET power module.

AB - This paper highlights the increased importance of volt-second compensating converter non-linearities such as dead time for wide bandgap semi-conductor devices utilized in medium voltage converters. The increasing voltage level of medium voltage converters impose a penalty to the volt-second compensation required to compensate for the voltage error caused by dead time. A thorough analysis and experimental results of switching events are utilized to present the required volt-second compensation for a 10 kV silicon-carbide MOSFET power module.

KW - Compensation

KW - Dead time

KW - MOSFET

KW - Medium voltage

KW - Silicon Carbide (SiC)

KW - Wide bandgap

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M3 - Article in proceeding

BT - 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

PB - IEEE (Institute of Electrical and Electronics Engineers)

T2 - 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

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ER -

Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs

Abstract

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ComElCo: Competitive Electrolyzer Converters

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Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

ComElCo: Competitive Electrolyzer Converters

Cite this