Dealing with leakage current in TLM and CTLM structures with vertical junction isolation

Svetlana N. Bystrova; Sander M. Smits; Johan H. Klootwijk; Rob A.M. Wolters; Alexey Y. Kovalgin; Lis K. Nanver; Jurriaan Schmitz

doi:10.1109/ICMTS.2017.7954257

Dealing with leakage current in TLM and CTLM structures with vertical junction isolation

Svetlana N. Bystrova, Sander M. Smits, Johan H. Klootwijk, Rob A.M. Wolters, Alexey Y. Kovalgin, Lis K. Nanver, Jurriaan Schmitz

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

2 Citations (Scopus)

Abstract

Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures.

Original language	English
Title of host publication	2017 International Conference of Microelectronic Test Structures, ICMTS 2017
Publisher	IEEE
Publication date	20 Jun 2017
Article number	7954257
ISBN (Electronic)	978-1-5090-3615-8
DOIs	https://doi.org/10.1109/ICMTS.2017.7954257
Publication status	Published - 20 Jun 2017
Event	2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, France Duration: 27 Mar 2017 → 30 Mar 2017

Conference

Conference	2017 International Conference of Microelectronic Test Structures, ICMTS 2017
Country/Territory	France
City	Grenoble
Period	27/03/2017 → 30/03/2017

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10.1109/ICMTS.2017.7954257

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@inproceedings{bb70df333d9a49488abbd895e7ddf7d9,

title = "Dealing with leakage current in TLM and CTLM structures with vertical junction isolation",

abstract = "Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures.",

author = "Bystrova, {Svetlana N.} and Smits, {Sander M.} and Klootwijk, {Johan H.} and Wolters, {Rob A.M.} and Kovalgin, {Alexey Y.} and Nanver, {Lis K.} and Jurriaan Schmitz",

year = "2017",

month = jun,

day = "20",

doi = "10.1109/ICMTS.2017.7954257",

language = "English",

booktitle = "2017 International Conference of Microelectronic Test Structures, ICMTS 2017",

publisher = "IEEE",

address = "United States",

note = "2017 International Conference of Microelectronic Test Structures, ICMTS 2017 ; Conference date: 27-03-2017 Through 30-03-2017",

}

Bystrova, SN, Smits, SM, Klootwijk, JH, Wolters, RAM, Kovalgin, AY, Nanver, LK & Schmitz, J 2017, Dealing with leakage current in TLM and CTLM structures with vertical junction isolation. in 2017 International Conference of Microelectronic Test Structures, ICMTS 2017., 7954257, IEEE, 2017 International Conference of Microelectronic Test Structures, ICMTS 2017, Grenoble, France, 27/03/2017. https://doi.org/10.1109/ICMTS.2017.7954257

Dealing with leakage current in TLM and CTLM structures with vertical junction isolation. / Bystrova, Svetlana N.; Smits, Sander M.; Klootwijk, Johan H. et al.
2017 International Conference of Microelectronic Test Structures, ICMTS 2017. IEEE, 2017. 7954257.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Dealing with leakage current in TLM and CTLM structures with vertical junction isolation

AU - Bystrova, Svetlana N.

AU - Smits, Sander M.

AU - Klootwijk, Johan H.

AU - Wolters, Rob A.M.

AU - Kovalgin, Alexey Y.

AU - Nanver, Lis K.

AU - Schmitz, Jurriaan

PY - 2017/6/20

Y1 - 2017/6/20

N2 - Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures.

AB - Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures.

UR - http://www.scopus.com/inward/record.url?scp=85023159614&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2017.7954257

DO - 10.1109/ICMTS.2017.7954257

M3 - Article in proceeding

AN - SCOPUS:85023159614

BT - 2017 International Conference of Microelectronic Test Structures, ICMTS 2017

PB - IEEE

T2 - 2017 International Conference of Microelectronic Test Structures, ICMTS 2017

Y2 - 27 March 2017 through 30 March 2017

ER -

Dealing with leakage current in TLM and CTLM structures with vertical junction isolation

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