Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

K. Yu; D. L. Zhang; H. Cong; X. Zhang; Y. Zhao; B. W. Cheng; C. B. Li

doi:10.1109/GROUP4.2016.7739080

Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

K. Yu, D. L. Zhang, H. Cong, X. Zhang, Y. Zhao, B. W. Cheng, C. B. Li

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

3 Citations (Scopus)

Abstract

The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.

Original language	English
Title of host publication	2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016
Number of pages	2
Publisher	IEEE Computer Society Press
Publication date	8 Nov 2016
Pages	34-35
Article number	7739080
ISBN (Electronic)	9781509019038
DOIs	https://doi.org/10.1109/GROUP4.2016.7739080
Publication status	Published - 8 Nov 2016
Event	13th IEEE International Conference on Group IV Photonics, GFP 2016 - Shanghai, China Duration: 24 Aug 2016 → 26 Aug 2016

Conference

Conference	13th IEEE International Conference on Group IV Photonics, GFP 2016
Country/Territory	China
City	Shanghai
Period	24/08/2016 → 26/08/2016
Sponsor	Intel, Luceda Photonics, Lumerical Solutions, Inc., Synopsys Inc.

Series	IEEE International Conference on Group IV Photonics GFP
Volume	2016-November
ISSN	1949-2081

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

GeSn
MBE
Si-based
Sn self-catalyzed

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10.1109/GROUP4.2016.7739080

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Cite this

@inproceedings{7f4539983d2e42079da32356e38d577e,

title = "Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method",

abstract = "The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.",

keywords = "GeSn, MBE, Si-based, Sn self-catalyzed",

author = "K. Yu and Zhang, {D. L.} and H. Cong and X. Zhang and Y. Zhao and Cheng, {B. W.} and Li, {C. B.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Group IV Photonics, GFP 2016 ; Conference date: 24-08-2016 Through 26-08-2016",

year = "2016",

month = nov,

day = "8",

doi = "10.1109/GROUP4.2016.7739080",

language = "English",

series = "IEEE International Conference on Group IV Photonics GFP",

pages = "34--35",

booktitle = "2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016",

publisher = "IEEE Computer Society Press",

address = "United States",

}

Yu, K, Zhang, DL, Cong, H, Zhang, X, Zhao, Y, Cheng, BW & Li, CB 2016, Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method. in 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016., 7739080, IEEE Computer Society Press, IEEE International Conference on Group IV Photonics GFP, vol. 2016-November, pp. 34-35, 13th IEEE International Conference on Group IV Photonics, GFP 2016, Shanghai, China, 24/08/2016. https://doi.org/10.1109/GROUP4.2016.7739080

Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method. / Yu, K.; Zhang, D. L.; Cong, H. et al.
2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016. IEEE Computer Society Press, 2016. p. 34-35 7739080 (IEEE International Conference on Group IV Photonics GFP, Vol. 2016-November).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

AU - Yu, K.

AU - Zhang, D. L.

AU - Cong, H.

AU - Zhang, X.

AU - Zhao, Y.

AU - Cheng, B. W.

AU - Li, C. B.

PY - 2016/11/8

Y1 - 2016/11/8

N2 - The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.

AB - The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.

KW - GeSn

KW - MBE

KW - Si-based

KW - Sn self-catalyzed

UR - http://www.scopus.com/inward/record.url?scp=85002342238&partnerID=8YFLogxK

U2 - 10.1109/GROUP4.2016.7739080

DO - 10.1109/GROUP4.2016.7739080

M3 - Article in proceeding

AN - SCOPUS:85002342238

T3 - IEEE International Conference on Group IV Photonics GFP

SP - 34

EP - 35

BT - 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016

PB - IEEE Computer Society Press

T2 - 13th IEEE International Conference on Group IV Photonics, GFP 2016

Y2 - 24 August 2016 through 26 August 2016

ER -

Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

Abstract

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Bibliographical note

Keywords

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AUB Link

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