Defects formation in the dual B+ and N+ ions implanted silicon

V. Popok; V. Odzhaev; V. Hnatowicz; J. Kvítek; V. Švorčik; V. Rybka

doi:10.1007/BF01715489

Defects formation in the dual B⁺ and N⁺ ions implanted silicon

V. Popok^*, V. Odzhaev, V. Hnatowicz, J. Kvítek, V. Švorčik, V. Rybka

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

1 Citation (Scopus)

Original language	English
Journal	Czechoslovak Journal of Physics
Volume	44
Issue number	10
Pages (from-to)	949-956
Number of pages	8
ISSN	0011-4626
DOIs	https://doi.org/10.1007/BF01715489
Publication status	Published - 1 Oct 1994
Externally published	Yes

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title = "Defects formation in the dual B+ and N+ ions implanted silicon",

author = "V. Popok and V. Odzhaev and V. Hnatowicz and J. Kv{\'i}tek and V. {\v S}vor{\v c}ik and V. Rybka",

year = "1994",

month = oct,

day = "1",

doi = "10.1007/BF01715489",

language = "English",

volume = "44",

pages = "949--956",

journal = "Czechoslovak Journal of Physics",

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T1 - Defects formation in the dual B+ and N+ ions implanted silicon

AU - Popok, V.

AU - Odzhaev, V.

AU - Hnatowicz, V.

AU - Kvítek, J.

AU - Švorčik, V.

AU - Rybka, V.

PY - 1994/10/1

Y1 - 1994/10/1

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U2 - 10.1007/BF01715489

DO - 10.1007/BF01715489

M3 - Journal article

AN - SCOPUS:21844519394

VL - 44

SP - 949

EP - 956

JO - Czechoslovak Journal of Physics

JF - Czechoslovak Journal of Physics

SN - 0011-4626

IS - 10

ER -

Defects formation in the dual B⁺ and N⁺ ions implanted silicon

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