Degradation Assessment and Precursor Identification for SiC MOSFETs under High Temp Cycling

Enes Ugur*, Fei Yang, Shi Pu, Shuai Zhao, Bilal Akin

*Corresponding author

Research output: Contribution to journalJournal articlepeer-review

33 Citations (Scopus)
Original languageEnglish
Article number8603754
JournalIEEE Transactions on Industry Applications
Volume55
Issue number3
Pages (from-to)2858-2867
Number of pages10
ISSN0093-9994
DOIs
Publication statusPublished - 1 May 2019
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received August 28, 2018; revised November 19, 2018; accepted December 28, 2018. Date of publication January 7, 2019; date of current version April 20, 2019. Paper 2018-IPCC-0882.R1, presented at the 2017 IEEE Energy Conversion Congress and Exposition, Cincinnati, OH, USA, Oct. 1–5, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Industrial Power Converter Committee of the IEEE Industry Applications Society. This work was supported in part by the TXACE/SRC under Task 2712.026 and NSF Grant 1454311. (Corresponding author: Bilal Akin.) E. Ugur, F. Yang, S. Pu, and B. Akin are with the Power Electronics and Drives Laboratory, Department of Electrical and Computer Science, The University of Texas at Dallas, Richardson, TX 75083, USA (e-mail:,enes.ugur@utdallas.edu; fei.yang@utdallas.edu; shi.pu@utdallas.edu; bilal.akin@utdallas.edu).

Publisher Copyright:
© 1972-2012 IEEE.

Keywords

  • Accelerated power cycling
  • aging assessment
  • fault diagnosis
  • health monitoring
  • power MOSFETs
  • reliability
  • robustness
  • silicon carbide (SiC).

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