Degradation mapping in high power IGBT modules using four-point probing

Kristian Bonderup Pedersen, Lotte Haxen Østergaard, Pramod Ghimire, Vladimir Popok, Kjeld Pedersen

Research output: Contribution to journalJournal articleResearchpeer-review

15 Citations (Scopus)
Original languageEnglish
JournalMicroelectronics Reliability
Volume55
Issue number8
Pages (from-to)1196-1204
ISSN0026-2714
DOIs
Publication statusPublished - Jul 2015

Cite this

Pedersen, Kristian Bonderup ; Haxen Østergaard, Lotte ; Ghimire, Pramod ; Popok, Vladimir ; Pedersen, Kjeld. / Degradation mapping in high power IGBT modules using four-point probing. In: Microelectronics Reliability. 2015 ; Vol. 55, No. 8. pp. 1196-1204.
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Degradation mapping in high power IGBT modules using four-point probing. / Pedersen, Kristian Bonderup; Haxen Østergaard, Lotte; Ghimire, Pramod; Popok, Vladimir; Pedersen, Kjeld.

In: Microelectronics Reliability, Vol. 55, No. 8, 07.2015, p. 1196-1204.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Degradation mapping in high power IGBT modules using four-point probing

AU - Pedersen, Kristian Bonderup

AU - Haxen Østergaard, Lotte

AU - Ghimire, Pramod

AU - Popok, Vladimir

AU - Pedersen, Kjeld

PY - 2015/7

Y1 - 2015/7

U2 - 10.1016/j.microrel.2015.05.011

DO - 10.1016/j.microrel.2015.05.011

M3 - Journal article

VL - 55

SP - 1196

EP - 1204

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 8

ER -