Abstract

Multi-chip power modules may suffer from increased switching losses and severe oscillation issues during switching transients due to e.g. parasitic capacitances and imbalances within the power module. This paper presents the switching performance measured at 7.2 kV/ 200 A of both high-side and low-side in an 8-chip (4+4) half-bridge power module based on 10 kV SiC MOSFETs in a double pulse test (DPT) setup. The demonstrated power module obtains almost a doubling of the current per chip ratio compared to the closest competitors with 50 A per chip. The clean switching and balanced switching loss between high-side and low-side switches are obtained with an optimized power module layout.
Original languageEnglish
Title of host publication2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Number of pages5
PublisherIEEE (Institute of Electrical and Electronics Engineers)
Publication date4 Nov 2024
Article number10773070
ISBN (Print)979-8-3503-7561-9
ISBN (Electronic)979-8-3503-7560-2
DOIs
Publication statusPublished - 4 Nov 2024
Event2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) - Dayton, United States
Duration: 4 Nov 20246 Nov 2024
Conference number: 11
https://wipda.org/

Conference

Conference2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Number11
Country/TerritoryUnited States
CityDayton
Period04/11/202406/11/2024
Internet address
SeriesIEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
ISSN2641-8274

Fingerprint

Dive into the research topics of 'Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module'. Together they form a unique fingerprint.

Cite this