Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

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Abstract

This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.
Original languageEnglish
Title of host publication2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages7
Place of Publication New Orleans, LA, USA
PublisherIEEE Press
Publication dateJun 2020
Pages2751-2757
Article number9124441
ISBN (Print)978-1-7281-4830-4
ISBN (Electronic)978-1-7281-4829-8
DOIs
Publication statusPublished - Jun 2020
Event2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, United States
Duration: 15 Mar 202019 Mar 2020

Conference

Conference2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Country/TerritoryUnited States
CityNew Orleans, LA
Period15/03/202019/03/2020
SeriesIEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN1048-2334

Keywords

  • 10 kV SiC MOSFETs
  • medium voltage (MV)
  • power stack
  • two-level voltage source converter (2L-VSC)

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