Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Dipen Narendra Dalal; Hongbo Zhao; Jannick Kjær Jørgensen; Nicklas Christensen; Asger Bjørn Jørgensen; Szymon Michal Beczkowski; Christian Uhrenfeldt; Stig Munk-Nielsen

doi:10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Dipen Narendra Dalal, Hongbo Zhao, Jannick Kjær Jørgensen, Nicklas Christensen, Asger Bjørn Jørgensen, Szymon Michal Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

24 Citations (Scopus)

747 Downloads (Pure)

Abstract

This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

Original language	English
Title of host publication	2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages	7
Place of Publication	New Orleans, LA, USA
Publisher	IEEE Press
Publication date	Jun 2020
Pages	2751-2757
Article number	9124441
ISBN (Print)	978-1-7281-4830-4
ISBN (Electronic)	978-1-7281-4829-8
DOIs	https://doi.org/10.1109/APEC39645.2020.9124441
Publication status	Published - Jun 2020
Event	2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, United States Duration: 15 Mar 2020 → 19 Mar 2020

Conference

Conference	2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Country/Territory	United States
City	New Orleans, LA
Period	15/03/2020 → 19/03/2020

Series	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	1048-2334

Keywords

10 kV SiC MOSFETs
medium voltage (MV)
power stack
two-level voltage source converter (2L-VSC)

Access to Document

10.1109/APEC39645.2020.9124441

Demonstration of 10 kV SiC MOSFET enabled MV power stackAccepted author manuscript, 2.33 MB

AUB Link

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Cite this

Dalal, D. N., Zhao, H., Jørgensen, J. K., Christensen, N., Jørgensen, A. B., Beczkowski, S. M., Uhrenfeldt, C., & Munk-Nielsen, S. (2020). Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. In 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp. 2751-2757). Article 9124441 IEEE Press. https://doi.org/10.1109/APEC39645.2020.9124441

@inproceedings{500957a2e03542e8af029909d940ee43,

title = "Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack",

abstract = "This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.",

keywords = "10 kV SiC MOSFETs, medium voltage (MV), power stack, two-level voltage source converter (2L-VSC)",

author = "Dalal, {Dipen Narendra} and Hongbo Zhao and J{\o}rgensen, {Jannick Kj{\ae}r} and Nicklas Christensen and J{\o}rgensen, {Asger Bj{\o}rn} and Beczkowski, {Szymon Michal} and Christian Uhrenfeldt and Stig Munk-Nielsen",

year = "2020",

month = jun,

doi = "10.1109/APEC39645.2020.9124441",

language = "English",

isbn = "978-1-7281-4830-4",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

pages = "2751--2757",

booktitle = "2020 IEEE Applied Power Electronics Conference and Exposition (APEC)",

note = "2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 15-03-2020 Through 19-03-2020",

}

Dalal, DN, Zhao, H , Jørgensen, JK, Christensen, N, Jørgensen, AB , Beczkowski, SM, Uhrenfeldt, C & Munk-Nielsen, S 2020, Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)., 9124441, IEEE Press, New Orleans, LA, USA, IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 2751-2757, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, LA, United States, 15/03/2020. https://doi.org/10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. / Dalal, Dipen Narendra; Zhao, Hongbo ; Jørgensen, Jannick Kjær et al.
2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, LA, USA: IEEE Press, 2020. p. 2751-2757 9124441 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

AU - Dalal, Dipen Narendra

AU - Zhao, Hongbo

AU - Jørgensen, Jannick Kjær

AU - Christensen, Nicklas

AU - Jørgensen, Asger Bjørn

AU - Beczkowski, Szymon Michal

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2020/6

Y1 - 2020/6

N2 - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

AB - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

KW - 10 kV SiC MOSFETs

KW - medium voltage (MV)

KW - power stack

KW - two-level voltage source converter (2L-VSC)

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U2 - 10.1109/APEC39645.2020.9124441

DO - 10.1109/APEC39645.2020.9124441

M3 - Article in proceeding

SN - 978-1-7281-4830-4

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

SP - 2751

EP - 2757

BT - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

CY - New Orleans, LA, USA

T2 - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 15 March 2020 through 19 March 2020

ER -

Dalal DN, Zhao H , Jørgensen JK, Christensen N, Jørgensen AB , Beczkowski SM et al. Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. In 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, LA, USA: IEEE Press. 2020. p. 2751-2757. 9124441. (IEEE Applied Power Electronics Conference and Exposition (APEC)). doi: 10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

MVolt: Medium Voltage Power Electronics for Wind Systems

Medium Voltage Based on SiC (MV-BASIC)

Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors

Cite this

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

MVolt: Medium Voltage Power Electronics for Wind Systems

Medium Voltage Based on SiC (MV-BASIC)

Research output

Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors

Cite this