Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules

Zhixing Yan; Gao Liu; Nianzun Qi; Morten Rahr Nielsen; Asger Bjørn Jørgensen; Stefan Meyer; Bjørn Rannestad; Michael Møller Bech; Hongbo Zhao; Stig Munk-Nielsen

doi:10.1109/IPEMC-ECCEAsia60879.2024.10567193

Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules

Zhixing Yan^*, Gao Liu, Nianzun Qi, Morten Rahr Nielsen, Asger Bjørn Jørgensen, Stefan Meyer, Bjørn Rannestad, Michael Møller Bech, Hongbo Zhao, Stig Munk-Nielsen

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

Abstract

As electricity generators from renewables become larger and more powerful, medium-voltage architectures play an increasingly important role in future power electronics systems. To further enhance the power-handling capacity, the implementation of parallel connections of Silicon Carbide (SiC) MOSFETs has gained widespread interest. However, it is important to note that the gate-loop performances of medium- and low-voltage modules are significantly different. Therefore, this paper presents a gate driver with discrete Miller clamp for parallel 10 kV SiC MOSFET modules and provides design considerations for future engineering reference.

Original language	English
Title of host publication	2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Number of pages	5
Publisher	IEEE
Publication date	17 May 2024
Pages	4649-4653
ISBN (Electronic)	9798350351330
DOIs	https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567193
Publication status	Published - 17 May 2024
Event	2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) - Chengdu, China Duration: 17 May 2024 → 20 May 2024 https://ieeexplore.ieee.org/xpl/conhome/10567049/proceeding

Conference

Conference	2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Country/Territory	China
City	Chengdu
Period	17/05/2024 → 20/05/2024
Internet address	https://ieeexplore.ieee.org/xpl/conhome/10567049/proceeding

Keywords

Crosstalk
Gate Driver
Medium-Voltage
Miller Clamp
Parallel Devices
Silicon Carbide

Access to Document

10.1109/IPEMC-ECCEAsia60879.2024.10567193

AUB Link

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MVolt: Medium Voltage Power Electronics for Wind Systems
Munk-Nielsen, S., Uhrenfeldt, C., Jørgensen, A. B., Jørgensen, J. K., Beczkowski, S., Bech, M. M., Spender-Andersen, G., Lascu, C., Zhao, H., Dalal, D. N., Kjærsgaard, B. F., Aunsborg, T. S., Jacobsen, J., Mishra, P. & Steffensen, B.
Innovation Fund Denmark
01/10/2020 → 30/09/2024
Project: Research

Cite this

Yan, Z., Liu, G., Qi, N., Nielsen, M. R., Jørgensen, A. B., Meyer, S., Rannestad, B., Bech, M. M., Zhao, H., & Munk-Nielsen, S. (2024). Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules. In 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) (pp. 4649-4653). IEEE. https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567193

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title = "Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules",

abstract = "As electricity generators from renewables become larger and more powerful, medium-voltage architectures play an increasingly important role in future power electronics systems. To further enhance the power-handling capacity, the implementation of parallel connections of Silicon Carbide (SiC) MOSFETs has gained widespread interest. However, it is important to note that the gate-loop performances of medium- and low-voltage modules are significantly different. Therefore, this paper presents a gate driver with discrete Miller clamp for parallel 10 kV SiC MOSFET modules and provides design considerations for future engineering reference.",

keywords = "Crosstalk, Gate Driver, Medium-Voltage, Miller Clamp, Parallel Devices, Silicon Carbide",

author = "Zhixing Yan and Gao Liu and Nianzun Qi and Nielsen, {Morten Rahr} and J{\o}rgensen, {Asger Bj{\o}rn} and Stefan Meyer and Bj{\o}rn Rannestad and Bech, {Michael M{\o}ller} and Hongbo Zhao and Stig Munk-Nielsen",

year = "2024",

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doi = "10.1109/IPEMC-ECCEAsia60879.2024.10567193",

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booktitle = "2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)",

publisher = "IEEE",

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note = " 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) ; Conference date: 17-05-2024 Through 20-05-2024",

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Yan, Z , Liu, G , Qi, N , Nielsen, MR , Jørgensen, AB , Meyer, S, Rannestad, B, Bech, MM , Zhao, H & Munk-Nielsen, S 2024, Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules. in 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). IEEE, pp. 4649-4653, 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia), Chengdu, China, 17/05/2024. https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567193

Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules. / Yan, Zhixing ; Liu, Gao ; Qi, Nianzun et al.
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). IEEE, 2024. p. 4649-4653.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules

AU - Yan, Zhixing

AU - Liu, Gao

AU - Qi, Nianzun

AU - Nielsen, Morten Rahr

AU - Jørgensen, Asger Bjørn

AU - Meyer, Stefan

AU - Rannestad, Bjørn

AU - Bech, Michael Møller

AU - Zhao, Hongbo

AU - Munk-Nielsen, Stig

PY - 2024/5/17

Y1 - 2024/5/17

N2 - As electricity generators from renewables become larger and more powerful, medium-voltage architectures play an increasingly important role in future power electronics systems. To further enhance the power-handling capacity, the implementation of parallel connections of Silicon Carbide (SiC) MOSFETs has gained widespread interest. However, it is important to note that the gate-loop performances of medium- and low-voltage modules are significantly different. Therefore, this paper presents a gate driver with discrete Miller clamp for parallel 10 kV SiC MOSFET modules and provides design considerations for future engineering reference.

AB - As electricity generators from renewables become larger and more powerful, medium-voltage architectures play an increasingly important role in future power electronics systems. To further enhance the power-handling capacity, the implementation of parallel connections of Silicon Carbide (SiC) MOSFETs has gained widespread interest. However, it is important to note that the gate-loop performances of medium- and low-voltage modules are significantly different. Therefore, this paper presents a gate driver with discrete Miller clamp for parallel 10 kV SiC MOSFET modules and provides design considerations for future engineering reference.

KW - Crosstalk

KW - Gate Driver

KW - Medium-Voltage

KW - Miller Clamp

KW - Parallel Devices

KW - Silicon Carbide

U2 - 10.1109/IPEMC-ECCEAsia60879.2024.10567193

DO - 10.1109/IPEMC-ECCEAsia60879.2024.10567193

M3 - Article in proceeding

SP - 4649

EP - 4653

BT - 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)

PB - IEEE

T2 - 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)

Y2 - 17 May 2024 through 20 May 2024

ER -

Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules

Abstract

Conference

Keywords

Access to Document

AUB Link

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Projects

MVolt: Medium Voltage Power Electronics for Wind Systems

Cite this