Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance

Jinkui He; Ariya Sangwongwanich; Yongheng Yang; Francesco Iannuzzo

doi:10.1109/ECCE44975.2020.9235490

Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance

Jinkui He, Ariya Sangwongwanich, Yongheng Yang, Francesco Iannuzzo

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

3 Citations (Scopus)

Abstract

1500-V Photovoltaic (PV) inverters are becoming the mainstream in solar PV industry. Extending the maximum DC voltage from 1000 V to 1500 V can reduce the installation cost of PV power plants. However, it may negatively affect the reliability of the corresponding PV inverters, due to the increased loading stresses, i.e., voltage stress and thermal loading of power devices. In this context, this paper investigates the potential to enhance the reliability of SiC-MOSFET-based 1500-V PV inverters through the design of the gate resistance, considering the switching overshoot and the stray inductance in the commutation loops. The impact of switching speed on the inverter reliability is analyzed with the mission profile of a 125-kW/1500-V PV system (interfacing the grid with a SiC-based two-level inverter) installed in Denmark. The evaluation results indicate that the PV inverter with the proposed design (i.e., variable gate resistance) can achieve a better reliability performance than that with fixed gate resistance and ensure a safer operating voltage margin.

Original language	English
Title of host publication	2020 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages	6
Publisher	IEEE Press
Publication date	Oct 2020
Pages	1850-1855
ISBN (Print)	978-1-7281-5827-3
ISBN (Electronic)	978-1-7281-5826-6
DOIs	https://doi.org/10.1109/ECCE44975.2020.9235490
Publication status	Published - Oct 2020
Event	IEEE Energy Conversion Congress and Exposition ECCE,2020 - Duration: 1 Sept 2020 → …

Conference

Conference	IEEE Energy Conversion Congress and Exposition ECCE,2020
Period	01/09/2020 → …

Series	IEEE Energy Conversion Congress and Exposition
ISSN	2329-3721

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10.1109/ECCE44975.2020.9235490

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APETT: Advanced Power Electronic Technology and Tools
Blaabjerg, F., Munk-Nielsen, S., Iannuzzo, F., Wang, H., Uhrenfeldt, C., Beczkowski, S. M., Zhou, D., Choi, U., Jørgensen, A. B., Vernica, I., Sangwongwanich, A., Christensen, N., Ceccarelli, L., Nielsen, C. K., Bahman, A. S., Pedersen, K., Pedersen, K. B. & Kristensen, P. K.
Innovation Fund Denmark
01/01/2017 → 30/06/2021
Project: Research

3 Citations
1 PhD thesis

Reliability Enhancement of 1500-V DC-link Photovoltaic Power Converters
He, J., 2021, Aalborg Universitetsforlag. 72 p.
Research output: PhD thesis

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@inproceedings{ec7e4c48ae3346449ecf3a898111414e,

title = "Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance",

abstract = "1500-V Photovoltaic (PV) inverters are becoming the mainstream in solar PV industry. Extending the maximum DC voltage from 1000 V to 1500 V can reduce the installation cost of PV power plants. However, it may negatively affect the reliability of the corresponding PV inverters, due to the increased loading stresses, i.e., voltage stress and thermal loading of power devices. In this context, this paper investigates the potential to enhance the reliability of SiC-MOSFET-based 1500-V PV inverters through the design of the gate resistance, considering the switching overshoot and the stray inductance in the commutation loops. The impact of switching speed on the inverter reliability is analyzed with the mission profile of a 125-kW/1500-V PV system (interfacing the grid with a SiC-based two-level inverter) installed in Denmark. The evaluation results indicate that the PV inverter with the proposed design (i.e., variable gate resistance) can achieve a better reliability performance than that with fixed gate resistance and ensure a safer operating voltage margin.",

author = "Jinkui He and Ariya Sangwongwanich and Yongheng Yang and Francesco Iannuzzo",

year = "2020",

month = oct,

doi = "10.1109/ECCE44975.2020.9235490",

language = "English",

isbn = "978-1-7281-5827-3",

series = "IEEE Energy Conversion Congress and Exposition",

pages = "1850--1855",

booktitle = "2020 IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "IEEE Press",

note = "IEEE Energy Conversion Congress and Exposition ECCE,2020 ; Conference date: 01-09-2020",

}

He, J, Sangwongwanich, A, Yang, Y & Iannuzzo, F 2020, Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance. in 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, IEEE Energy Conversion Congress and Exposition, pp. 1850-1855, IEEE Energy Conversion Congress and Exposition ECCE,2020, 01/09/2020. https://doi.org/10.1109/ECCE44975.2020.9235490

Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance. / He, Jinkui; Sangwongwanich, Ariya; Yang, Yongheng et al.
2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2020. p. 1850-1855 (IEEE Energy Conversion Congress and Exposition).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance

AU - He, Jinkui

AU - Sangwongwanich, Ariya

AU - Yang, Yongheng

AU - Iannuzzo, Francesco

PY - 2020/10

Y1 - 2020/10

N2 - 1500-V Photovoltaic (PV) inverters are becoming the mainstream in solar PV industry. Extending the maximum DC voltage from 1000 V to 1500 V can reduce the installation cost of PV power plants. However, it may negatively affect the reliability of the corresponding PV inverters, due to the increased loading stresses, i.e., voltage stress and thermal loading of power devices. In this context, this paper investigates the potential to enhance the reliability of SiC-MOSFET-based 1500-V PV inverters through the design of the gate resistance, considering the switching overshoot and the stray inductance in the commutation loops. The impact of switching speed on the inverter reliability is analyzed with the mission profile of a 125-kW/1500-V PV system (interfacing the grid with a SiC-based two-level inverter) installed in Denmark. The evaluation results indicate that the PV inverter with the proposed design (i.e., variable gate resistance) can achieve a better reliability performance than that with fixed gate resistance and ensure a safer operating voltage margin.

AB - 1500-V Photovoltaic (PV) inverters are becoming the mainstream in solar PV industry. Extending the maximum DC voltage from 1000 V to 1500 V can reduce the installation cost of PV power plants. However, it may negatively affect the reliability of the corresponding PV inverters, due to the increased loading stresses, i.e., voltage stress and thermal loading of power devices. In this context, this paper investigates the potential to enhance the reliability of SiC-MOSFET-based 1500-V PV inverters through the design of the gate resistance, considering the switching overshoot and the stray inductance in the commutation loops. The impact of switching speed on the inverter reliability is analyzed with the mission profile of a 125-kW/1500-V PV system (interfacing the grid with a SiC-based two-level inverter) installed in Denmark. The evaluation results indicate that the PV inverter with the proposed design (i.e., variable gate resistance) can achieve a better reliability performance than that with fixed gate resistance and ensure a safer operating voltage margin.

U2 - 10.1109/ECCE44975.2020.9235490

DO - 10.1109/ECCE44975.2020.9235490

M3 - Article in proceeding

SN - 978-1-7281-5827-3

T3 - IEEE Energy Conversion Congress and Exposition

SP - 1850

EP - 1855

BT - 2020 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE Press

T2 - IEEE Energy Conversion Congress and Exposition ECCE,2020

Y2 - 1 September 2020

ER -

Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance

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APETT: Advanced Power Electronic Technology and Tools

Research output

Reliability Enhancement of 1500-V DC-link Photovoltaic Power Converters

Cite this