Design of a high-efficiency GaN HEMT RF power amplifier

Yelin Wang, Torben Larsen

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
Title of host publicationSignals, Circuits and Systems (ISSCS), 2015 International Symposium on
Number of pages4
PublisherIEEE Press
Publication date14 Aug 2015
Article number7203934
ISBN (Print)9781467374873
DOIs
Publication statusPublished - 14 Aug 2015
Event12th International Symposium on Signals, Circuits and Systems, ISSCS 2015 - Iasi
Duration: 9 Jul 201510 Jul 2015

Conference

Conference12th International Symposium on Signals, Circuits and Systems, ISSCS 2015
CityIasi
Period09/07/201510/07/2015
SeriesInternational Symposium on Signals, Circuits and Systems (ISSCS). Proceedings

Fingerprint

High electron mobility transistors
Power amplifiers
Radio frequency amplifiers
Gallium nitride
Transmitters
Bandwidth
Communication
Electric potential

Keywords

  • class-J
  • GaN HEMT
  • high efficiency
  • load-pull
  • Power amplifier

Cite this

Wang, Y., & Larsen, T. (2015). Design of a high-efficiency GaN HEMT RF power amplifier. In Signals, Circuits and Systems (ISSCS), 2015 International Symposium on [7203934] IEEE Press. International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings https://doi.org/10.1109/ISSCS.2015.7203934
Wang, Yelin ; Larsen, Torben. / Design of a high-efficiency GaN HEMT RF power amplifier. Signals, Circuits and Systems (ISSCS), 2015 International Symposium on. IEEE Press, 2015. (International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings).
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title = "Design of a high-efficiency GaN HEMT RF power amplifier",
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author = "Yelin Wang and Torben Larsen",
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doi = "10.1109/ISSCS.2015.7203934",
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Wang, Y & Larsen, T 2015, Design of a high-efficiency GaN HEMT RF power amplifier. in Signals, Circuits and Systems (ISSCS), 2015 International Symposium on., 7203934, IEEE Press, International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings, 12th International Symposium on Signals, Circuits and Systems, ISSCS 2015, Iasi, 09/07/2015. https://doi.org/10.1109/ISSCS.2015.7203934

Design of a high-efficiency GaN HEMT RF power amplifier. / Wang, Yelin; Larsen, Torben.

Signals, Circuits and Systems (ISSCS), 2015 International Symposium on. IEEE Press, 2015. 7203934 (International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

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AU - Larsen, Torben

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KW - class-J

KW - GaN HEMT

KW - high efficiency

KW - load-pull

KW - Power amplifier

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U2 - 10.1109/ISSCS.2015.7203934

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Wang Y, Larsen T. Design of a high-efficiency GaN HEMT RF power amplifier. In Signals, Circuits and Systems (ISSCS), 2015 International Symposium on. IEEE Press. 2015. 7203934. (International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings). https://doi.org/10.1109/ISSCS.2015.7203934