Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module

Muhammad Nawaz; Nikolaos Bezentes; Francesco Iannuzzo; Kalle Ilves

doi:10.1109/ECCE.2018.8557772

Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module

Muhammad Nawaz, Nikolaos Bezentes, Francesco Iannuzzo, Kalle Ilves

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

506 Downloads (Pure)

Abstract

The main objective of this paper is to develop a Simulink based modeling platform for a commercial 3.3 kV/400 A SiC MOSEFT power module. The implemented equivalent circuit of 3.3 kV SiC MOSFET in Simulink platform is based on the original well-established single-chip Mc Nutt/Hefner model. The developed model has been validated with the experimental data both for static and dynamic tests at several temperatures. The dynamic simulations have further been verified with various gate resistances that accurately describes the transient operation during turn-on and turn off of the pulse sequence. The influence of various parasitic elements (i.e., stray inductances) have been studied. Finally, the operation of a Buck converter, whose switch consists of two modules in series, has been verified, studying the converter efficiency under various circuit parameters.

Original language	English
Title of host publication	Proceedings of the 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018
Number of pages	8
Publisher	IEEE Press
Publication date	Sept 2018
Pages	3547-3554
Article number	8557772
ISBN (Print)	978-1-4799-7313-2
ISBN (Electronic)	978-1-4799-7312-5
DOIs	https://doi.org/10.1109/ECCE.2018.8557772
Publication status	Published - Sept 2018
Event	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States Duration: 23 Sept 2018 → 27 Sept 2018

Conference

Conference	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018
Country/Territory	United States
City	Portland
Period	23/09/2018 → 27/09/2018
Sponsor	IEEE Industry Applications Society (IAS), IEEE Power Electronic Society (PELS)

Series	IEEE Energy Conversion Congress and Exposition
ISSN	2329-3721

Keywords

Device Simulation
SiC device modeling
SiC MOSFETs
SiC power modules
Wide bandgap devices

Access to Document

10.1109/ECCE.2018.8557772

SubmittedAccepted author manuscript, 725 KB

AUB Link

Search for the material in Aalborg University Library's search engine

Cite this

@inproceedings{f52da6ffdbff4809bb80a214aaf94ada,

title = "Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module",

abstract = "The main objective of this paper is to develop a Simulink based modeling platform for a commercial 3.3 kV/400 A SiC MOSEFT power module. The implemented equivalent circuit of 3.3 kV SiC MOSFET in Simulink platform is based on the original well-established single-chip Mc Nutt/Hefner model. The developed model has been validated with the experimental data both for static and dynamic tests at several temperatures. The dynamic simulations have further been verified with various gate resistances that accurately describes the transient operation during turn-on and turn off of the pulse sequence. The influence of various parasitic elements (i.e., stray inductances) have been studied. Finally, the operation of a Buck converter, whose switch consists of two modules in series, has been verified, studying the converter efficiency under various circuit parameters.",

keywords = "Device Simulation, SiC device modeling, SiC MOSFETs, SiC power modules, Wide bandgap devices",

author = "Muhammad Nawaz and Nikolaos Bezentes and Francesco Iannuzzo and Kalle Ilves",

year = "2018",

month = sep,

doi = "10.1109/ECCE.2018.8557772",

language = "English",

isbn = "978-1-4799-7313-2",

series = "IEEE Energy Conversion Congress and Exposition",

pages = "3547--3554",

booktitle = "Proceedings of the 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018",

publisher = "IEEE Press",

note = "10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 ; Conference date: 23-09-2018 Through 27-09-2018",

}

Nawaz, M, Bezentes, N, Iannuzzo, F & Ilves, K 2018, Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module. in Proceedings of the 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018., 8557772, IEEE Press, IEEE Energy Conversion Congress and Exposition, pp. 3547-3554, 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018, Portland, United States, 23/09/2018. https://doi.org/10.1109/ECCE.2018.8557772

Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module. / Nawaz, Muhammad; Bezentes, Nikolaos; Iannuzzo, Francesco et al.
Proceedings of the 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. IEEE Press, 2018. p. 3547-3554 8557772 (IEEE Energy Conversion Congress and Exposition).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module

AU - Nawaz, Muhammad

AU - Bezentes, Nikolaos

AU - Iannuzzo, Francesco

AU - Ilves, Kalle

PY - 2018/9

Y1 - 2018/9

N2 - The main objective of this paper is to develop a Simulink based modeling platform for a commercial 3.3 kV/400 A SiC MOSEFT power module. The implemented equivalent circuit of 3.3 kV SiC MOSFET in Simulink platform is based on the original well-established single-chip Mc Nutt/Hefner model. The developed model has been validated with the experimental data both for static and dynamic tests at several temperatures. The dynamic simulations have further been verified with various gate resistances that accurately describes the transient operation during turn-on and turn off of the pulse sequence. The influence of various parasitic elements (i.e., stray inductances) have been studied. Finally, the operation of a Buck converter, whose switch consists of two modules in series, has been verified, studying the converter efficiency under various circuit parameters.

AB - The main objective of this paper is to develop a Simulink based modeling platform for a commercial 3.3 kV/400 A SiC MOSEFT power module. The implemented equivalent circuit of 3.3 kV SiC MOSFET in Simulink platform is based on the original well-established single-chip Mc Nutt/Hefner model. The developed model has been validated with the experimental data both for static and dynamic tests at several temperatures. The dynamic simulations have further been verified with various gate resistances that accurately describes the transient operation during turn-on and turn off of the pulse sequence. The influence of various parasitic elements (i.e., stray inductances) have been studied. Finally, the operation of a Buck converter, whose switch consists of two modules in series, has been verified, studying the converter efficiency under various circuit parameters.

KW - Device Simulation

KW - SiC device modeling

KW - SiC MOSFETs

KW - SiC power modules

KW - Wide bandgap devices

UR - http://www.scopus.com/inward/record.url?scp=85060297874&partnerID=8YFLogxK

U2 - 10.1109/ECCE.2018.8557772

DO - 10.1109/ECCE.2018.8557772

M3 - Article in proceeding

AN - SCOPUS:85060297874

SN - 978-1-4799-7313-2

T3 - IEEE Energy Conversion Congress and Exposition

SP - 3547

EP - 3554

BT - Proceedings of the 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018

PB - IEEE Press

T2 - 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018

Y2 - 23 September 2018 through 27 September 2018

ER -

Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Center Of Reliable Power Electronics (CORPE)

Cite this

Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

Center Of Reliable Power Electronics (CORPE)

Cite this