Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

Haoze Luo*, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg

*Corresponding author

Research output: Contribution to journalConference article in JournalResearchpeer-review

10 Citations (Scopus)

Abstract

In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.
Original languageEnglish
JournalMicroelectronics Reliability
Volume76-77
Pages (from-to)415-419
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - Sep 2017
Event28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, France
Duration: 25 Sep 201728 Sep 2017

Conference

Conference28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
CountryFrance
CityBordeaux
Period25/09/201728/09/2017

Fingerprint

field effect transistors
modules
Aging of materials
degradation
Degradation
cycles
wire
Wire
Power MOSFET
Temperature
temperature

Cite this

@inproceedings{d43adf86902d4461a93496088cf276b9,
title = "Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules",
abstract = "In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.",
author = "Haoze Luo and Nick Baker and Francesco Iannuzzo and Frede Blaabjerg",
year = "2017",
month = "9",
doi = "10.1016/j.microrel.2017.07.004",
language = "English",
volume = "76-77",
pages = "415--419",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",

}

Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. / Luo, Haoze; Baker, Nick; Iannuzzo, Francesco; Blaabjerg, Frede.

In: Microelectronics Reliability, Vol. 76-77, 09.2017, p. 415-419.

Research output: Contribution to journalConference article in JournalResearchpeer-review

TY - GEN

T1 - Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

AU - Luo, Haoze

AU - Baker, Nick

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2017/9

Y1 - 2017/9

N2 - In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.

AB - In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.

UR - http://www.scopus.com/inward/record.url?scp=85022046487&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2017.07.004

DO - 10.1016/j.microrel.2017.07.004

M3 - Conference article in Journal

VL - 76-77

SP - 415

EP - 419

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -