Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

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Abstract

Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.
Original languageEnglish
Title of host publication2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)
Number of pages6
Place of PublicationGrenoble, France
PublisherIEEE
Publication date24 Aug 2022
Article number3
ISBN (Electronic)9781728199337
DOIs
Publication statusPublished - 24 Aug 2022
Event2022 IEEE International Workshop on Integrated Power Packaging (IWIPP) - Grenoble, France, Grenoble, France
Duration: 24 Aug 202226 Aug 2022

Conference

Conference2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)
LocationGrenoble, France
Country/TerritoryFrance
CityGrenoble
Period24/08/202226/08/2022

Keywords

  • 10 kV SiC MOSFETs
  • 3D Thermal Simulation
  • Digital design
  • Power cycle
  • Power module

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