Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

Masaki Takahashi; Thore Stig Aunsborg; Christian Uhrenfeldt; Stig Munk-Nielsen; Asger Bjørn Jørgensen

doi:10.1109/IWIPP50752.2022.9894237

Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

Masaki Takahashi^*, Thore Stig Aunsborg, Christian Uhrenfeldt, Stig Munk-Nielsen, Asger Bjørn Jørgensen

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

3 Citations (Scopus)

216 Downloads (Pure)

Abstract

Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.

Original language	English
Title of host publication	2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)
Number of pages	6
Place of Publication	Grenoble, France
Publisher	IEEE (Institute of Electrical and Electronics Engineers)
Publication date	24 Aug 2022
Article number	3
ISBN (Electronic)	9781728199337
DOIs	https://doi.org/10.1109/IWIPP50752.2022.9894237
Publication status	Published - 24 Aug 2022
Event	2022 IEEE International Workshop on Integrated Power Packaging (IWIPP) - Grenoble, France, Grenoble, France Duration: 24 Aug 2022 → 26 Aug 2022

Conference

Conference	2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)
Location	Grenoble, France
Country/Territory	France
City	Grenoble
Period	24/08/2022 → 26/08/2022

Keywords

10 kV SiC MOSFETs
3D Thermal Simulation
Digital design
Power cycle
Power module

Access to Document

10.1109/IWIPP50752.2022.9894237

IWIPP2022_MasakiTakahashiAccepted author manuscript, 793 KB

https://ieeexplore.ieee.org/document/9894237

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Cite this

Takahashi, M., Aunsborg, T. S., Uhrenfeldt, C., Munk-Nielsen, S., & Jørgensen, A. B. (2022). Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities. In 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP) Article 3 IEEE (Institute of Electrical and Electronics Engineers). https://doi.org/10.1109/IWIPP50752.2022.9894237

@inproceedings{12f96d388cc74725bcdb8c959ef39469,

title = "Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities",

abstract = "Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.",

keywords = "10 kV SiC MOSFETs, 3D Thermal Simulation, Digital design, Power cycle, Power module",

author = "Masaki Takahashi and Aunsborg, {Thore Stig} and Christian Uhrenfeldt and Stig Munk-Nielsen and J{\o}rgensen, {Asger Bj{\o}rn}",

year = "2022",

month = aug,

day = "24",

doi = "10.1109/IWIPP50752.2022.9894237",

language = "English",

booktitle = "2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)",

publisher = "IEEE (Institute of Electrical and Electronics Engineers)",

address = "United States",

note = "2022 IEEE International Workshop on Integrated Power Packaging (IWIPP) ; Conference date: 24-08-2022 Through 26-08-2022",

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Takahashi, M , Aunsborg, TS, Uhrenfeldt, C, Munk-Nielsen, S & Jørgensen, AB 2022, Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities. in 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)., 3, IEEE (Institute of Electrical and Electronics Engineers), Grenoble, France, 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP), Grenoble, France, 24/08/2022. https://doi.org/10.1109/IWIPP50752.2022.9894237

Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities. / Takahashi, Masaki ; Aunsborg, Thore Stig; Uhrenfeldt, Christian et al.
2022 IEEE International Workshop on Integrated Power Packaging (IWIPP). Grenoble, France: IEEE (Institute of Electrical and Electronics Engineers), 2022. 3.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

AU - Takahashi, Masaki

AU - Aunsborg, Thore Stig

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

AU - Jørgensen, Asger Bjørn

PY - 2022/8/24

Y1 - 2022/8/24

N2 - Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.

AB - Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.

KW - 10 kV SiC MOSFETs

KW - 3D Thermal Simulation

KW - Digital design

KW - Power cycle

KW - Power module

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U2 - 10.1109/IWIPP50752.2022.9894237

DO - 10.1109/IWIPP50752.2022.9894237

M3 - Article in proceeding

BT - 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)

PB - IEEE (Institute of Electrical and Electronics Engineers)

CY - Grenoble, France

T2 - 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)

Y2 - 24 August 2022 through 26 August 2022

ER -

Takahashi M , Aunsborg TS, Uhrenfeldt C, Munk-Nielsen S , Jørgensen AB. Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities. In 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP). Grenoble, France: IEEE (Institute of Electrical and Electronics Engineers). 2022. 3 doi: 10.1109/IWIPP50752.2022.9894237

Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

CoDE: Center of Digitalized Electronics (CoDE)

Developing the Novel Reliability Design Method with 3D-simulation of SiC Power Module

MVolt: Medium Voltage Power Electronics for Wind Systems

Cite this

Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

CoDE: Center of Digitalized Electronics (CoDE)

Developing the Novel Reliability Design Method with 3D-simulation of SiC Power Module

MVolt: Medium Voltage Power Electronics for Wind Systems

Cite this