Dual implantation of silicon with boron and argon ions

V. Popok; V. Hnatowicz; J. Kvítek; V. Švorčík; V. Rybka

doi:10.1002/pssa.2211410109

Dual implantation of silicon with boron and argon ions

V. Popok^*, V. Hnatowicz, J. Kvítek, V. Švorčík, V. Rybka

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

2 Citations (Scopus)

Abstract

Silicon wafers are implanted with 40 keV B⁺ ions (1.2 × 10¹⁵ or 1.2 × 10¹⁵ cm⁻²) and 50 or 100 keV Ar⁺ ions (from 1.2 × 10¹⁴ to 1.2 × 10¹⁵ cm⁻²). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.

Original language	English
Journal	physica status solidi (a)
Volume	141
Issue number	1
Pages (from-to)	93-98
Number of pages	6
ISSN	0031-8965
DOIs	https://doi.org/10.1002/pssa.2211410109
Publication status	Published - 1 Jan 1994
Externally published	Yes

Access to Document

10.1002/pssa.2211410109

AUB Link

Search for the material in Aalborg University Library's search engine

Cite this

@article{6f40dd40b34549c6846291e6ba8a2356,

title = "Dual implantation of silicon with boron and argon ions",

abstract = "Silicon wafers are implanted with 40 keV B+ ions (1.2 × 1015 or 1.2 × 1015 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 1014 to 1.2 × 1015 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.",

author = "V. Popok and V. Hnatowicz and J. Kv{\'i}tek and V. {\v S}vor{\v c}{\'i}k and V. Rybka",

year = "1994",

month = jan,

day = "1",

doi = "10.1002/pssa.2211410109",

language = "English",

volume = "141",

pages = "93--98",

journal = "physica status solidi (a)",

issn = "0031-8965",

publisher = "Wiley",

number = "1",

}

TY - JOUR

T1 - Dual implantation of silicon with boron and argon ions

AU - Popok, V.

AU - Hnatowicz, V.

AU - Kvítek, J.

AU - Švorčík, V.

AU - Rybka, V.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Silicon wafers are implanted with 40 keV B+ ions (1.2 × 1015 or 1.2 × 1015 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 1014 to 1.2 × 1015 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.

AB - Silicon wafers are implanted with 40 keV B+ ions (1.2 × 1015 or 1.2 × 1015 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 1014 to 1.2 × 1015 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.

UR - http://www.scopus.com/inward/record.url?scp=6044250860&partnerID=8YFLogxK

U2 - 10.1002/pssa.2211410109

DO - 10.1002/pssa.2211410109

M3 - Journal article

AN - SCOPUS:6044250860

SN - 0031-8965

VL - 141

SP - 93

EP - 98

JO - physica status solidi (a)

JF - physica status solidi (a)

IS - 1

ER -

Dual implantation of silicon with boron and argon ions

Abstract

Access to Document

AUB Link

Other files and links

Fingerprint

Cite this