Dual implantation of silicon with boron and argon ions

Vladimir Popok; Vladimir Hnatowicz; J. Kvítek; V. Svorcik; V. Rybka

Dual implantation of silicon with boron and argon ions

Vladimir Popok, Vladimir Hnatowicz, J. Kvítek, V. Svorcik, V. Rybka

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Silicon wafers are implanted with 40 keV B+ ions (1.2 × 10e15 or 1.2 × 10e15 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 10e14 to 1.2 × 10e15 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.

Original language	English
Journal	physica status solidi (a)
Volume	141
Issue number	1
Pages (from-to)	93-98
Number of pages	6
ISSN	0031-8965
Publication status	Published - 1994
Externally published	Yes

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@article{0ce1a7296916421bbc7f062d859a0ac1,

title = "Dual implantation of silicon with boron and argon ions",

abstract = "Silicon wafers are implanted with 40 keV B+ ions (1.2 × 10e15 or 1.2 × 10e15 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 10e14 to 1.2 × 10e15 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.",

author = "Vladimir Popok and Vladimir Hnatowicz and J. Kv{\'i}tek and V. Svorcik and V. Rybka",

year = "1994",

language = "English",

volume = "141",

pages = "93--98",

journal = "physica status solidi (a)",

issn = "0031-8965",

publisher = "Wiley",

number = "1",

}

TY - JOUR

T1 - Dual implantation of silicon with boron and argon ions

AU - Popok, Vladimir

AU - Hnatowicz, Vladimir

AU - Kvítek, J.

AU - Svorcik, V.

AU - Rybka, V.

PY - 1994

Y1 - 1994

N2 - Silicon wafers are implanted with 40 keV B+ ions (1.2 × 10e15 or 1.2 × 10e15 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 10e14 to 1.2 × 10e15 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.

AB - Silicon wafers are implanted with 40 keV B+ ions (1.2 × 10e15 or 1.2 × 10e15 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 10e14 to 1.2 × 10e15 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.

M3 - Journal article

SN - 0031-8965

VL - 141

SP - 93

EP - 98

JO - physica status solidi (a)

JF - physica status solidi (a)

IS - 1

ER -

Dual implantation of silicon with boron and argon ions

Abstract

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