Silicon wafers are implanted with 40 keV B+ ions (1.2 × 10e15 or 1.2 × 10e15 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 10e14 to 1.2 × 10e15 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.
|Journal||physica status solidi (a)|
|Number of pages||6|
|Publication status||Published - 1994|