Thermal models are needed when designing power converters for Wind Turbines (WTs) in order to carry out thermal and reliability assessment of certain designs. Usually the thermal models of Insulated Gate Bipolar Transistors (IGBTs) are given in the datasheet in various forms at component-level, not taking into account the thermal distribution among the chips. This is especially relevant in the case of Press-Pack (PP) IGBTs because any non-uniformity of the clamping pressure can affect the chip-level thermal impedances. This happens because the contact thermal resistances in the thermal impedance chains are clamping pressure dependent. In this paper both component-level and chip-level dynamic thermal models for the PP IGBT under investigation are developed. Both models are developed using geometric parameters and material properties of the device. Using the thermal models, the thermal impedance curves under various mechanical clamping conditions are derived. Moreover, the deformation of the internal components of the PP IGBT under operating-like conditions is investigated with the help of the thermal models and the coefficient of thermal expansion (CTE) information.
|Title of host publication||Proceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013|
|Number of pages||6|
|Publication status||Published - 2013|
|Event||39th Annual Conference of the IEEE Industrial Electronics Society - Wien, Austria|
Duration: 10 Nov 2013 → 13 Nov 2013
|Conference||39th Annual Conference of the IEEE Industrial Electronics Society|
|Period||10/11/2013 → 13/11/2013|