Effects of Auxiliary-Source Connection in Multichip Power Module

Helong Li, Stig Munk-Nielsen, Xiongfei Wang, Szymon Beczkowski, Steve Jones, Xiaoping Dai

Research output: Contribution to journalJournal articleResearchpeer-review

25 Citations (Scopus)

Abstract

Auxiliary-source bond wires and connections are widely used in power modules with paralleled MOSFETs or IGBTs. This paper investigates the operation mechanism of the auxiliary-source connections in multichip power modules. It reveals that the auxiliary-source connections cannot fully decouple the power loop and the gate loop like how the Kelvin-source connection does, owing to their involvement in the loop of the power source current. Three effects of the auxiliary-source connections are then analyzed, which are 1) the common source stray inductance reduction, 2) the transient drain-source current imbalance mitigation, and 3) the influence on the steady-state current distribution. Lastly, simulations and experimental results validate the theoretical analysis.
Original languageEnglish
JournalI E E E Transactions on Power Electronics
Volume32
Issue number10
Pages (from-to)7816 - 7823
Number of pages8
ISSN0885-8993
DOIs
Publication statusPublished - Oct 2017

Keywords

  • DBC layout
  • Power module
  • Auxiliary connection
  • SiC MOSFET

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