Effects of auxiliary source connections in multichip power module

Helong Li, Stig Munk-Nielsen, Szymon Beczkowski, Xiongfei Wang, Emanuel-Petre Eni

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)

Abstract

Auxiliary source bond wires and connections are widely used to in the power module with paralleled MOSFETs or IGBTs. This paper investigates the working mechanism and the effects of the auxiliary source connections in multichip power modules. It reveals that the auxiliary source connections cannot totally decouple the power loop and the gate loop like how the Kelvin source connection does, because they are still in the loop of power source current. Three effects of the auxiliary source connection are investigated and analyzed: common source stray inductance reduction, transient drain-source current imbalance mitigation and influence on the steady state bond wire current distribution. Simulation and experimental results validate the working mechanism analysis and the effects of the auxiliary source connections.
Original languageEnglish
Title of host publicationProceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages6
PublisherIEEE
Publication dateMar 2016
Pages3101 - 3106
ISBN (Print)978-1-4673-8393-6, 978-1-4673-9551-9
ISBN (Electronic)978-1-4673-9550-2
DOIs
Publication statusPublished - Mar 2016
Event2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, United States
Duration: 20 Mar 201624 Mar 2016
http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Conference

Conference2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
LocationLong Beach Convention and Entertainment Center
Country/TerritoryUnited States
CityLong Beach
Period20/03/201624/03/2016
Internet address

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