Effects of Removing Bottom-side Copper in Baseplate-less Power Modules

Nikolaj Helmer Kristensen*, Jakob Iversen Deichgraeber, Kerim Brackovic, Szymon Michal Beczkowski, Stig Munk-Nielsen, Asger Bjørn Jørgensen

*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Abstract

Performance of SiC MOSFETs are limited by the inherent parasitic elements originating from the packaging structure. In this paper, the parasitic capacitance of a 1.2 kV SiC MOSFET half-bridge power module is significantly reduced by removing the bottom-side copper, and the influence on its electrical and thermal performance is experimentally evaluated. Finally it is concluded that even though the modified module show significant advantages in turn-on switching energy, an increase in turn-off energy offsets it while also achieving a worse thermal performance.
Original languageEnglish
Title of host publication2025 26th European Conference on Power Electronics and Applications (EPE'25 ECCE Europe)
Number of pages8
Publication date31 Mar 2025
DOIs
Publication statusPublished - 31 Mar 2025
Event2025 26th European Conference on Power Electronics and Applications (EPE'25 ECCE Europe) - Paris, France
Duration: 31 Mar 20254 Apr 2025
Conference number: 26
https://epe2025.com

Conference

Conference2025 26th European Conference on Power Electronics and Applications (EPE'25 ECCE Europe)
Number26
Country/TerritoryFrance
CityParis
Period31/03/202504/04/2025
Internet address

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