@inproceedings{2842ef779ccc4b9b96586ce245b743b0,
title = "Effects of the HV-BIGT Design Elements on the High-Frequency Oscillation Instability during Short Circuit Transients",
abstract = "The design elements of the Bi-mode Insulated Gate Transistor BIGT show that the combination of the high hole injection levels supplied from the collector together with the presence of a localized lifetime control at the MOS cells have brought improvements on the short circuit capability, strongly minimizing the high-frequency oscillations observed in IGBTs. The BIGT concept and the traditional IGBT structures have been compared under short circuit conditions to investigate the charge-field interactions at the MOS cells, triggering the oscillation mechanism. The effect of the lifetime control and the irradiation method on the short circuit capability is investigated.",
keywords = "BIGT, Bipolar gain, Gate oscillations, IGBT, Kirk Effect, Parametric oscillation, Robustness, Short circuit, TCAD",
author = "Reigosa, {P. Diaz} and C. Papadopoulos and F. Iannuzzo and C. Corvasce and M. Rahimo",
year = "2019",
month = may,
doi = "10.1109/ISPSD.2019.8757575",
language = "English",
isbn = "978-1-7281-0580-2",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
pages = "55--58",
booktitle = "Proceedings of 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)",
publisher = "IEEE",
address = "United States",
note = "31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
}