Abstract
Reconstruction of aluminum metallization on top of power electronic chips is a well-known wear out phenomenon under power cycling conditions. However, the origins of reconstruction are still under discussion. In the current study, a method for carrying out passive thermal cycling of power diodes in a controlled environment is developed, thus eliminating possible contribution to degradation from electric current and humidity. The focus is centered on the structural changes in the top Al metallization layer of the power diodes, correlated with the
change of sheet resistance. Since the atmosphere is controlled and the device is not subjected to a current load the observed degradation of metallization and corresponding increase of resistance is purely induced by thermo-mechanical stress. A correlation between number of cycles, micro-structural evolution, and sheet resistance is found and conclusions on the dominant role of thermo-mechanical stresses are achieved. Additionally, proposals are made on how the current thermal test setup can be further developed to study the role of corrosion.
change of sheet resistance. Since the atmosphere is controlled and the device is not subjected to a current load the observed degradation of metallization and corresponding increase of resistance is purely induced by thermo-mechanical stress. A correlation between number of cycles, micro-structural evolution, and sheet resistance is found and conclusions on the dominant role of thermo-mechanical stresses are achieved. Additionally, proposals are made on how the current thermal test setup can be further developed to study the role of corrosion.
Original language | English |
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Journal | Microelectronics Reliability |
Volume | 55 |
Pages (from-to) | 1988-1991 |
Number of pages | 4 |
ISSN | 0026-2714 |
DOIs | |
Publication status | Published - 16 Oct 2015 |
Event | 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Toulouse, France Duration: 5 Oct 2015 → 9 Oct 2015 |
Conference
Conference | 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis |
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Country/Territory | France |
City | Toulouse |
Period | 05/10/2015 → 09/10/2015 |