Effects of thermal cycling on aluminum metallization of power diodes

Mads Brincker, Kristian Bonderup Pedersen, Peter Kjær Kristensen, Vladimir Popok

    Research output: Contribution to journalConference article in JournalResearchpeer-review

    12 Citations (Scopus)

    Abstract

    Reconstruction of aluminum metallization on top of power electronic chips is a well-known wear out phenomenon under power cycling conditions. However, the origins of reconstruction are still under discussion. In the current study, a method for carrying out passive thermal cycling of power diodes in a controlled environment is developed, thus eliminating possible contribution to degradation from electric current and humidity. The focus is centered on the structural changes in the top Al metallization layer of the power diodes, correlated with the
    change of sheet resistance. Since the atmosphere is controlled and the device is not subjected to a current load the observed degradation of metallization and corresponding increase of resistance is purely induced by thermo-mechanical stress. A correlation between number of cycles, micro-structural evolution, and sheet resistance is found and conclusions on the dominant role of thermo-mechanical stresses are achieved. Additionally, proposals are made on how the current thermal test setup can be further developed to study the role of corrosion.
    Original languageEnglish
    JournalMicroelectronics Reliability
    Volume55
    Pages (from-to)1988-1991
    Number of pages4
    ISSN0026-2714
    DOIs
    Publication statusPublished - 16 Oct 2015
    Event26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Toulouse, France
    Duration: 5 Oct 20159 Oct 2015

    Conference

    Conference26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
    CountryFrance
    CityToulouse
    Period05/10/201509/10/2015

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