EMI Modeling of Three-Level Active Neutral-Point-Clamped SiC Inverter Under Different Modulation Schemes

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Abstract

This paper investigates the electromagnetic interference (EMI) emission in three-level active neutral-point-clamped (3L-ANPC) silicon carbide (SiC) inverter. Four typical modulation schemes of 3L-ANPC inverter are considered. An EMI model is established by including all the system parasitics and noise sources. Based on this model, a comparison of different modulation schemes on EMI emission is carried out. Simulations are performed in a case study to confirm the theoretical expectations.
Original languageEnglish
Title of host publicationICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
Number of pages6
Place of PublicationBusan, Korea (South)
PublisherIEEE Press
Publication dateMay 2019
Pages1781-1786
Article number8797291
ISBN (Print)978-1-7281-1612-9
ISBN (Electronic)978-89-5708-313-0
Publication statusPublished - May 2019
Event2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) - Busan, Korea, Republic of
Duration: 27 May 201930 May 2019

Conference

Conference2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
CountryKorea, Republic of
CityBusan
Period27/05/201930/05/2019
SeriesInternational Conference on Power Electronics
ISSN2150-6078

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Keywords

  • 3L-ANPC
  • EMI
  • Modulation scheme
  • SiC

Cite this

Pan, D., Chen, M., Wang, X., Wang, H., Blaabjerg, F., & Wang, W. (2019). EMI Modeling of Three-Level Active Neutral-Point-Clamped SiC Inverter Under Different Modulation Schemes. In ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia (pp. 1781-1786). [8797291] IEEE Press. International Conference on Power Electronics