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This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.
- High-power IGBT modules
- Auxiliary parasitic inductance
- Dynamic thermo-sensitive electrical parameters
- Junction temperature extraction principles