Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

Haoze Luo; Wuhua Li; Francesco Iannuzzo; Xiangning He; Frede Blaabjerg

doi:10.1109/TIE.2017.2745442

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

Haoze Luo, Wuhua Li, Francesco Iannuzzo, Xiangning He, Frede Blaabjerg

Research output: Contribution to journal › Journal article › Research › peer-review

54 Citations (Scopus)

464 Downloads (Pure)

Abstract

This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

Original language	English
Journal	I E E E Transactions on Industrial Electronics
Volume	65
Issue number	6
Pages (from-to)	4724-4738
Number of pages	15
ISSN	0278-0046
DOIs	https://doi.org/10.1109/TIE.2017.2745442
Publication status	Published - Jun 2018

Keywords

High-power IGBT modules
Auxiliary parasitic inductance
Dynamic thermo-sensitive electrical parameters
Junction temperature extraction principles

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10.1109/TIE.2017.2745442

Final_submittedAccepted author manuscript, 1.44 MB

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@article{5a4b60d818764c6c934945a45380224e,

title = "Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules",

abstract = "This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.",

keywords = "High-power IGBT modules, Auxiliary parasitic inductance, Dynamic thermo-sensitive electrical parameters, Junction temperature extraction principles",

author = "Haoze Luo and Wuhua Li and Francesco Iannuzzo and Xiangning He and Frede Blaabjerg",

year = "2018",

month = jun,

doi = "10.1109/TIE.2017.2745442",

language = "English",

volume = "65",

pages = "4724--4738",

journal = "I E E E Transactions on Industrial Electronics",

issn = "0278-0046",

publisher = "IEEE",

number = "6",

}

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules. / Luo, Haoze; Li, Wuhua; Iannuzzo, Francesco et al.
In: I E E E Transactions on Industrial Electronics, Vol. 65, No. 6, 06.2018, p. 4724-4738.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

AU - Luo, Haoze

AU - Li, Wuhua

AU - Iannuzzo, Francesco

AU - He, Xiangning

AU - Blaabjerg, Frede

PY - 2018/6

Y1 - 2018/6

N2 - This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

AB - This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

KW - High-power IGBT modules

KW - Auxiliary parasitic inductance

KW - Dynamic thermo-sensitive electrical parameters

KW - Junction temperature extraction principles

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U2 - 10.1109/TIE.2017.2745442

DO - 10.1109/TIE.2017.2745442

M3 - Journal article

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SP - 4724

EP - 4738

JO - I E E E Transactions on Industrial Electronics

JF - I E E E Transactions on Industrial Electronics

IS - 6

ER -

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

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Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

Abstract

Keywords

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Center Of Reliable Power Electronics (CORPE)

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