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Abstract
This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.
Original language | English |
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Journal | I E E E Transactions on Industrial Electronics |
Volume | 65 |
Issue number | 6 |
Pages (from-to) | 4724-4738 |
Number of pages | 15 |
ISSN | 0278-0046 |
DOIs | |
Publication status | Published - Jun 2018 |
Keywords
- High-power IGBT modules
- Auxiliary parasitic inductance
- Dynamic thermo-sensitive electrical parameters
- Junction temperature extraction principles
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Dive into the research topics of 'Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules'. Together they form a unique fingerprint.Projects
- 1 Finished
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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research