Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

Haoze Luo, Wuhua Li, Francesco Iannuzzo, Xiangning He, Frede Blaabjerg

Research output: Contribution to journalJournal articleResearchpeer-review

25 Citations (Scopus)
223 Downloads (Pure)

Abstract

This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.
Original languageEnglish
JournalI E E E Transactions on Industrial Electronics
Volume65
Issue number6
Pages (from-to)4724-4738
Number of pages15
ISSN0278-0046
DOIs
Publication statusPublished - Jun 2018

Keywords

  • High-power IGBT modules
  • Auxiliary parasitic inductance
  • Dynamic thermo-sensitive electrical parameters
  • Junction temperature extraction principles

Fingerprint Dive into the research topics of 'Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules'. Together they form a unique fingerprint.

Cite this