Abstract
In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
| Number of pages | 9 |
| Publisher | IEEE Press |
| Publication date | Sept 2019 |
| Article number | 8915545 |
| ISBN (Electronic) | 9789075815313 |
| DOIs | |
| Publication status | Published - Sept 2019 |
| Event | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy Duration: 3 Sept 2019 → 5 Sept 2019 |
Conference
| Conference | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
|---|---|
| Country/Territory | Italy |
| City | Genova |
| Period | 03/09/2019 → 05/09/2019 |
Keywords
- Insulated gate bipolar transistors
- Threshold voltage
- Cooling
- Europe
- Temperature distribution
- Nonhomogeneous media
- Device modeling
- Emerging technology
- IGBT
- Thermal design
- Thermal stress