Enhancement of Thermo-mechanical Behavior of IGBT Modules through Engineered Threshold Voltages

M. Akbari, P. D. Reigosa, A. S. Bahman, L. Ceccarelli, F. Iannuzzo, M. T. Bina

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
Title of host publicationProceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Number of pages9
PublisherIEEE Press
Publication dateSep 2019
Article number8915545
ISBN (Electronic)9789075815313
DOIs
Publication statusPublished - Sep 2019
Event2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy
Duration: 3 Sep 20195 Sep 2019

Conference

Conference2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
CountryItaly
CityGenova
Period03/09/201905/09/2019

Keywords

  • Insulated gate bipolar transistors
  • Threshold voltage
  • Cooling
  • Europe
  • Temperature distribution
  • Nonhomogeneous media
  • Device modeling
  • Emerging technology
  • IGBT
  • Thermal design
  • Thermal stress

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