Abstract
Temperature sensitive electrical parameters (TSEPs) allow junction temperature measurements on power semiconductors without modification to module packaging. The on-state collector-emitter voltage (VCE) in IGBTs is an attractive option for junction temperature measurement since it is relatively easy to measure during operation. Nevertheless, the resistive contribution of interconnection and packaging materials has been shown to introduce large errors when using the VCE for junction temperature measurement. This paper uses an IR camera to experimentally evaluate a modified-VCE method designed to remove this series resistance contribution. This method can be described as the difference in VCE at two different gate voltages (15 V and 13 V). Experimental validation focuses primarily on the accuracy of the temperature measurement and investigates paralleled chip configurations as well as multiple devices with differing geometry and manufacturer. The modified-VCE shows significant improvement over the normal-VCE in terms of correlation to mean junction temperature, with maximum errors typically below 10 deg C. These results are additionally compared with one traditional and robust TSEP: the voltage drop under low current injection.
Original language | English |
---|---|
Title of host publication | Proceedings of CIPS 2016; 9th International Conference on Integrated Power Electronics Systems |
Number of pages | 6 |
Publisher | VDE Verlag GMBH |
Publication date | Mar 2016 |
ISBN (Print) | 978-3-8007-4171-7 |
ISBN (Electronic) | 9783800741717 |
Publication status | Published - Mar 2016 |
Event | 9th International Conference on Integrated Power Electronics Systems (CIPS) 2016 - Duration: 8 Mar 2016 → 10 Mar 2016 |
Conference
Conference | 9th International Conference on Integrated Power Electronics Systems (CIPS) 2016 |
---|---|
Period | 08/03/2016 → 10/03/2016 |
Bibliographical note
Funding Information:The authors thank the French National Research Agency (MEMPHIS ANR-13-PRGE-0005-01 PROGELEC project)
Publisher Copyright:
© VDE VERLAG GMBH · Berlin · Offenbach, Germany
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.