Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate; G. Busatto; F. Iannuzzo; S. Mattiazzo; A. Sanseverino; L. Silvestrin; D. Tedesco; F. Velardi

doi:10.1016/j.microrel.2015.06.139

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate, G. Busatto^*, F. Iannuzzo, S. Mattiazzo, A. Sanseverino, L. Silvestrin, D. Tedesco, F. Velardi

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

30 Citations (Scopus)

Abstract

An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.

Original language	English
Journal	Microelectronics Reliability
Volume	55
Issue number	9-10
Pages (from-to)	1496-1500
Number of pages	5
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2015.06.139
Publication status	Published - 1 Aug 2015
Externally published	Yes

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title = "Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT",

abstract = "An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.",

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author = "C. Abbate and G. Busatto and F. Iannuzzo and S. Mattiazzo and A. Sanseverino and L. Silvestrin and D. Tedesco and F. Velardi",

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doi = "10.1016/j.microrel.2015.06.139",

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AU - Abbate, C.

AU - Busatto, G.

AU - Iannuzzo, F.

AU - Mattiazzo, S.

AU - Sanseverino, A.

AU - Silvestrin, L.

AU - Tedesco, D.

AU - Velardi, F.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.

AB - An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100. V and 200. V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.

KW - Enhancement mode GaN power HEMT

KW - Heavy ion irradiation

KW - SEB

KW - SEE

KW - SEGR

UR - http://www.scopus.com/inward/record.url?scp=84943455111&partnerID=8YFLogxK

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DO - 10.1016/j.microrel.2015.06.139

M3 - Journal article

AN - SCOPUS:84943455111

SN - 0026-2714

VL - 55

SP - 1496

EP - 1500

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-10

ER -

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

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