Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate; G. Busatto; F. Iannuzzo; S. Mattiazzo; A. Sanseverino; L. Silvestrin; D. Tedesco; F. Velardi

doi:10.1016/j.microrel.2015.06.139

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate, G. Busatto^*, F. Iannuzzo, S. Mattiazzo, A. Sanseverino, L. Silvestrin, D. Tedesco, F. Velardi

^*Corresponding author

Research output: Contribution to journal › Journal article › Research › peer-review

12 Citations (Scopus)

Original language	English
Journal	Microelectronics Reliability
Volume	55
Issue number	9-10
Pages (from-to)	1496-1500
Number of pages	5
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2015.06.139
Publication status	Published - 1 Aug 2015
Externally published	Yes

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10.1016/j.microrel.2015.06.139

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@article{a3890962e7b84ea6820a8bfb801fa009,

title = "Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT",

keywords = "Enhancement mode GaN power HEMT, Heavy ion irradiation, SEB, SEE, SEGR",

author = "C. Abbate and G. Busatto and F. Iannuzzo and S. Mattiazzo and A. Sanseverino and L. Silvestrin and D. Tedesco and F. Velardi",

year = "2015",

month = aug,

day = "1",

doi = "10.1016/j.microrel.2015.06.139",

language = "English",

volume = "55",

pages = "1496--1500",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Pergamon Press",

number = "9-10",

}

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. / Abbate, C.; Busatto, G.; Iannuzzo, F.; Mattiazzo, S.; Sanseverino, A.; Silvestrin, L.; Tedesco, D.; Velardi, F.

In: Microelectronics Reliability, Vol. 55, No. 9-10, 01.08.2015, p. 1496-1500.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

AU - Abbate, C.

AU - Busatto, G.

AU - Iannuzzo, F.

AU - Mattiazzo, S.

AU - Sanseverino, A.

AU - Silvestrin, L.

AU - Tedesco, D.

AU - Velardi, F.

PY - 2015/8/1

Y1 - 2015/8/1

KW - Enhancement mode GaN power HEMT

KW - Heavy ion irradiation

KW - SEB

KW - SEE

KW - SEGR

UR - http://www.scopus.com/inward/record.url?scp=84943455111&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2015.06.139

DO - 10.1016/j.microrel.2015.06.139

M3 - Journal article

AN - SCOPUS:84943455111

VL - 55

SP - 1496

EP - 1500

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 9-10

ER -

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

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