Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate, G. Busatto*, F. Iannuzzo, S. Mattiazzo, A. Sanseverino, L. Silvestrin, D. Tedesco, F. Velardi

*Corresponding author

Research output: Contribution to journalJournal articleResearchpeer-review

12 Citations (Scopus)
Original languageEnglish
JournalMicroelectronics Reliability
Volume55
Issue number9-10
Pages (from-to)1496-1500
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - 1 Aug 2015
Externally publishedYes

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