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Abstract
This paper presents the experimental results obtained from investigating the impact of short-circuit in SiC MOSFETs at high temperatures. The results indicate that a gate degradation mechanism occurs under a single-stress short circuit event at nominal voltage and junction temperature of 150° C. The failure mechanism is the gate breakdown, which can be early detected by monitoring the voltage drop of the gate-voltage waveform. The reduction of the gate voltage indicates that a leakage current flows through the gate, leading to a permanent damage of the device but preserving its voltage blocking capability. This hypothesis has been validated through semiconductor failure analysis by comparing the structure of a fresh and a degraded SiC MOSFET. A Focused Ion Beam cut is performed showing cracks between the poly-silicon gate and aluminium source. Furthermore alterations/particles near the source contact have been found for the degraded device.
Original language | English |
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Title of host publication | Proceedings of the IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits |
Number of pages | 5 |
Volume | 2018-July |
Publisher | IEEE Press |
Publication date | Jul 2018 |
Pages | 1-5 |
Article number | 8452575 |
ISBN (Print) | 978-1-5386-4930-5 |
ISBN (Electronic) | 978-1-5386-4929-9 |
DOIs | |
Publication status | Published - Jul 2018 |
Event | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore Duration: 16 Jul 2018 → 19 Jul 2018 |
Conference
Conference | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 |
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Country/Territory | Singapore |
City | Singapore |
Period | 16/07/2018 → 19/07/2018 |
Sponsor | Hamamatsu Photonics K.K., Thermo Fisher Scientific, Inc. |
Series | IEEE International Symposium on Physical & Failure Analysis of Integrated Circuit (IPFA) |
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ISSN | 1946-1550 |
Keywords
- Logic gates
- Silicon carbide
- MOSFET
- Failure analysis
- Leakage currents
- Ion beams
- Aluminum
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Dive into the research topics of 'Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperature'. Together they form a unique fingerprint.Projects
- 1 Finished
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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research