Failure analysis of high-voltage power MOSFET in the three phase inverter

Peng Xue; Guicui Fu

doi:10.1109/PHM.2016.7819822

Failure analysis of high-voltage power MOSFET in the three phase inverter

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

1 Citation (Scopus)

Abstract

This paper presents a failure analysis procedure on a power MOSFET in a three phase inverter. The analyzed power MOSFET has been obtained from a chopper leg in a three phase inverter when an anomalous failure is detected. At first, the X-ray microscope is utilized to inspect the failed device. A hint of the burn-out area in the chip is observed in the cross-section X-ray microscopy image. After that, the device is decapped and the internal chip is inspected. Two burn-out cavities, together with some cracks and melted areas are observed on the silicon chip. The signature of the burn-out cavities suggests that the device failure is induced by the current filamentation induced by high operation temperature. Thanks to the Scanning Acoustic Microscope (SAM) analysis, large void spot was found in the solider layer. This indicate that the device's high operation temperature is due to the degradation of the solider layer.

Original language	English
Title of host publication	Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016
Editors	Qiang Miao, Zhaojun Li, Ming J. Zuo, Liudong Xing, Zhigang Tian
Publisher	IEEE Signal Processing Society
Publication date	16 Jan 2017
Article number	7819822
ISBN (Electronic)	9781509027781
DOIs	https://doi.org/10.1109/PHM.2016.7819822
Publication status	Published - 16 Jan 2017
Event	7th IEEE Prognostics and System Health Management Conference, PHM-Chengdu 2016 - Chengdu, Sichuan, China Duration: 19 Oct 2016 → 21 Oct 2016

Conference

Conference	7th IEEE Prognostics and System Health Management Conference, PHM-Chengdu 2016
Country/Territory	China
City	Chengdu, Sichuan
Period	19/10/2016 → 21/10/2016

Series	Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Component
Failure analysis
Power MOSFET
SAM analysis
Voids

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10.1109/PHM.2016.7819822

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Xue, Peng ; Fu, Guicui. / Failure analysis of high-voltage power MOSFET in the three phase inverter. Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016. editor / Qiang Miao ; Zhaojun Li ; Ming J. Zuo ; Liudong Xing ; Zhigang Tian. IEEE Signal Processing Society, 2017. (Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016).

@inproceedings{e45a56cb16894fb6bcabcac51b40e7ed,

title = "Failure analysis of high-voltage power MOSFET in the three phase inverter",

abstract = "This paper presents a failure analysis procedure on a power MOSFET in a three phase inverter. The analyzed power MOSFET has been obtained from a chopper leg in a three phase inverter when an anomalous failure is detected. At first, the X-ray microscope is utilized to inspect the failed device. A hint of the burn-out area in the chip is observed in the cross-section X-ray microscopy image. After that, the device is decapped and the internal chip is inspected. Two burn-out cavities, together with some cracks and melted areas are observed on the silicon chip. The signature of the burn-out cavities suggests that the device failure is induced by the current filamentation induced by high operation temperature. Thanks to the Scanning Acoustic Microscope (SAM) analysis, large void spot was found in the solider layer. This indicate that the device's high operation temperature is due to the degradation of the solider layer.",

keywords = "Component, Failure analysis, Power MOSFET, SAM analysis, Voids",

author = "Peng Xue and Guicui Fu",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 7th IEEE Prognostics and System Health Management Conference, PHM-Chengdu 2016 ; Conference date: 19-10-2016 Through 21-10-2016",

year = "2017",

month = jan,

day = "16",

doi = "10.1109/PHM.2016.7819822",

language = "English",

series = "Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016",

editor = "Qiang Miao and Zhaojun Li and Zuo, {Ming J.} and Liudong Xing and Zhigang Tian",

booktitle = "Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016",

publisher = "IEEE Signal Processing Society",

address = "United States",

}

Xue, P & Fu, G 2017, Failure analysis of high-voltage power MOSFET in the three phase inverter. in Q Miao, Z Li, MJ Zuo, L Xing & Z Tian (eds), Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016., 7819822, IEEE Signal Processing Society, Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016, 7th IEEE Prognostics and System Health Management Conference, PHM-Chengdu 2016, Chengdu, Sichuan, China, 19/10/2016. https://doi.org/10.1109/PHM.2016.7819822

Failure analysis of high-voltage power MOSFET in the three phase inverter. / Xue, Peng; Fu, Guicui.
Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016. ed. / Qiang Miao; Zhaojun Li; Ming J. Zuo; Liudong Xing; Zhigang Tian. IEEE Signal Processing Society, 2017. 7819822 (Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Failure analysis of high-voltage power MOSFET in the three phase inverter

AU - Xue, Peng

AU - Fu, Guicui

PY - 2017/1/16

Y1 - 2017/1/16

N2 - This paper presents a failure analysis procedure on a power MOSFET in a three phase inverter. The analyzed power MOSFET has been obtained from a chopper leg in a three phase inverter when an anomalous failure is detected. At first, the X-ray microscope is utilized to inspect the failed device. A hint of the burn-out area in the chip is observed in the cross-section X-ray microscopy image. After that, the device is decapped and the internal chip is inspected. Two burn-out cavities, together with some cracks and melted areas are observed on the silicon chip. The signature of the burn-out cavities suggests that the device failure is induced by the current filamentation induced by high operation temperature. Thanks to the Scanning Acoustic Microscope (SAM) analysis, large void spot was found in the solider layer. This indicate that the device's high operation temperature is due to the degradation of the solider layer.

AB - This paper presents a failure analysis procedure on a power MOSFET in a three phase inverter. The analyzed power MOSFET has been obtained from a chopper leg in a three phase inverter when an anomalous failure is detected. At first, the X-ray microscope is utilized to inspect the failed device. A hint of the burn-out area in the chip is observed in the cross-section X-ray microscopy image. After that, the device is decapped and the internal chip is inspected. Two burn-out cavities, together with some cracks and melted areas are observed on the silicon chip. The signature of the burn-out cavities suggests that the device failure is induced by the current filamentation induced by high operation temperature. Thanks to the Scanning Acoustic Microscope (SAM) analysis, large void spot was found in the solider layer. This indicate that the device's high operation temperature is due to the degradation of the solider layer.

KW - Component

KW - Failure analysis

KW - Power MOSFET

KW - SAM analysis

KW - Voids

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U2 - 10.1109/PHM.2016.7819822

DO - 10.1109/PHM.2016.7819822

M3 - Article in proceeding

AN - SCOPUS:85015673104

T3 - Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016

BT - Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016

A2 - Miao, Qiang

A2 - Li, Zhaojun

A2 - Zuo, Ming J.

A2 - Xing, Liudong

A2 - Tian, Zhigang

PB - IEEE Signal Processing Society

T2 - 7th IEEE Prognostics and System Health Management Conference, PHM-Chengdu 2016

Y2 - 19 October 2016 through 21 October 2016

ER -

Xue P, Fu G. Failure analysis of high-voltage power MOSFET in the three phase inverter. In Miao Q, Li Z, Zuo MJ, Xing L, Tian Z, editors, Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016. IEEE Signal Processing Society. 2017. 7819822. (Proceedings of 2016 Prognostics and System Health Management Conference, PHM-Chengdu 2016). doi: 10.1109/PHM.2016.7819822

Failure analysis of high-voltage power MOSFET in the three phase inverter

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